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				Renesas Electronics Corporation
Part No.	UPD44325092BF5-E33-FQ1 PD44325092B-15
OCR Text	...for 72mb : 2a and 7a for 144mb : 2a, 7a and 5b for 288mb 2a of this product can also be used as nc. pd44325092b, pd44325182b, pd44325362b r10ds0038ej0200 rev.2.00 page 5 of 36 august 11, 2011 pin arran...
Description	4M X 9 QDR SRAM, 0.45 ns, PBGA165 36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION
File Size	385.35K / 36 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	UPD44324092BF5-E33-FQ1 UPD44324182BF5-E33-FQ1 PD44324092BF5-E50-FQ1-A PD44324182BF5-E40-FQ1-A PD44324362BF5-E33-FQ1-A PD44324182BF5-E35-FQ1-A PD44324182BF5-E50-FQ1-A PD44324092BF5-E40-FQ1-A PD44324362BF5-E35-FQ1-A PD44324092BF5-E35-FQ1
OCR Text	... : 2a for 72mb : 2a and 7a for 144mb : 2a, 7a and 5b for 288mb 2a of this product can also be used as nc. pd44324092b, pd44324182b, pd44324362b r10ds0036ej0200 rev.2.00 page 5 of 36 august 2, 2011 pin arrangement ...
Description	4M X 9 DDR SRAM, 0.45 ns, PBGA165 2M X 18 DDR SRAM, 0.45 ns, PBGA165 36M-BIT DDR II SRAM 2-WORD BURST OPERATION
File Size	478.87K / 37 Page	View it Online	Download Datasheet

				Integrated Silicon Solution, Inc
Part No.	IS61DDB41M18A
OCR Text	...r 36mb, 10a for 72mb and 2a for 144mb. x18 fbga ball configuration (top view) 1 2 3 4 5 6 7 8 9 10 11 a cq# nc/sa 1 sa r/w# bw 1 # k# nc/sa 1 ld# sa nc/sa 1 cq b nc dq9 nc sa nc/sa 1 k bw 0 # sa nc nc dq8 c nc nc nc v ...
Description	1Mx18, 512Kx36 18Mb DDR-II (Burst 4) CIO SYNCHRONOUS SRAM
File Size	499.96K / 30 Page	View it Online	Download Datasheet

				GSI TECHNOLOGY
Part No.	GS81302Q09GE-333I
OCR Text	144mb sigmaquad tm -ii burst of 2 sram 333 mhz?250 mhz 1.8 v v dd 1.8 v and 1.5 v i/o 165-bump bga commercial temp industrial temp rev: 1.04 4/2011 1/34 ? 2011, gsi technology specifications cited are subject to change without notice . f...
Description	16M X 9 DDR SRAM, 0.45 ns, PBGA165
File Size	414.94K / 34 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K7S3236T4C-FECI33 K7S3218T4C-FECI33 K7S3236T4C-FECI40 K7S3218T4C-FECI40 K7S3236T4C-FECI45
OCR Text	...ress, i.e. 3A for 72Mb, 10A for 144mb and 2A for 288Mb. 2. BW0 controls write to D0:D8, BW1 controls write to D9:D17, BW2 controls write to D18:D26 and BW3 controls write to D27:D35. PIN NAME SYMBOL K, K QVLD CQ, CQ Doff SA D0-35 PIN NU...
Description	1Mx36 & 2Mx18 QDRTM II b4 SRAM
File Size	437.11K / 20 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K7J643682M-FECI30 K7J641882M K7J641882M-FC16 K7J641882M-FC20 K7J641882M-FC25 K7J641882M-FC30 K7J641882M-FECI16 K7J641882M-FECI20 K7J641882M-FECI25 K7J641882M-FECI30 K7J643682M K7J643682M-FC16 K7J643682M-FC20 K7J643682M-FC25 K7J643682M-FC30 K7J643682M-FECI16 K7J643682M-FECI20 K7J643682M-FECI25
OCR Text	...r density address, i.e. 10A for 144mb and 2A for 288Mb. 2. BW0 controls write to D0:D8, BW1 controls write to D9:D17, BW2 controls write to D18:D26 and BW3 controls write to D27:D35. PIN NAME SYMBOL K, K C, C CQ, CQ Doff SA D0-35 PIN NU...
Description	72Mb M-die DDRII SRAM Specification
File Size	312.35K / 17 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K7J323682M K7J321882M
OCR Text	...ress, i.e. 3A for 72Mb, 10A for 144mb and 2A for 288Mb. 2. BW0 controls write to D0:D8, BW1 controls write to D9:D17, BW2 controls write to D18:D26 and BW3 controls write to D27:D35. PIN NAME SYMBOL K, K C, C CQ, CQ Doff SA D0-35 PIN NU...
Description	1Mx36 & 2Mx18 DDR II SIO b2 SRAM
File Size	304.26K / 17 Page	View it Online	Download Datasheet

				美国讯泰微波有限公司上海代表 Holtek Semiconductor Inc. Infineon Technologies AG 厦门宏发电声股份有限公司 Hynix Semiconductor Inc. Integrated Device Technology, Inc.
Part No.	HMC550 HT6740 HYB25S1G800TCL-37 HFV6 HY5V22LF-P HY5V52LF-S HY5V22LF-6 IDT72V36110L7.5PF
OCR Text	...sent 9Mb, 18Mb, 36Mb and future 144mb devices * 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package * RoHS-compliant 165-bump BGA package available 72Mb SigmaCIO DDR-II Burst of 2 SRAM 333 MHz-167 MHz 1.8 V VDD 1.8 V and 1.5 V I/O ...
Description	GAAS MMIC SPST FAILSAFE SWITCH, DC - 6 GHz 13.56MHz RFID Transponder MEMORY SPECTRUM AUTOMOTIVE RELAY 4 Banks x 1M x 32Bit Synchronous DRAM 4Banks x 2M x 32bits Synchronous DRAM 3.3 VOLT HIGH-DENSITY SUPERSYNC II36-BIT FIFO
File Size	921.87K / 37 Page	View it Online	Download Datasheet

				GSI TECHNOLOGY
Part No.	GS81302Q19GE-333I
OCR Text	144mb sigmaquad-ii+ tm burst of 2 sram 333 mhz?200 mhz 1.8 v v dd 1.8 v and 1.5 v i/o 165-bump bga commercial temp industrial temp rev: 1.01 12/2010 1/31 ? 2010, gsi technology specifications cited are subject to change without notice...
Description	8M X 18 STANDARD SRAM, 0.45 ns, PBGA165
File Size	494.43K / 31 Page	View it Online	Download Datasheet

For 144mb Found Datasheets File :: 296 Search Time::1.157ms
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