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  4.92 Datasheet PDF File

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    HE8050S

Hi-Sincerity Microelectronics
HSMC[Hi-Sincerity Mocroelectronics]
Hi-Sincerity Mocroelectroni...
Part No. HE8050S
OCR Text 4 HE8050S NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8050S is designed for general purpose amplifier applications. Absolut...92 Dimension A B 12 3 Spec. No. : HE6110 Issued Date : 1992.09.30 Revised Date : 2001.07.18 Pag...
Description NPN EPITAXIAL PLANAR TRANSISTOR

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    HE8050

Hi-Sincerity Microelectronics
HSMC[Hi-Sincerity Mocroelectronics]
Part No. HE8050
OCR Text ...0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I 1 2 3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5 *2 *2 Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5 *2 *2 Notes : 1.Dimension...
Description NPN EPITAXIAL PLANAR TRANSISTOR

File Size 35.35K  /  3 Page

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    HPN2907A PN2907A

Hi-Sincerity Microelectronics
HSMC[Hi-Sincerity Mocroelectronics]
Part No. HPN2907A PN2907A
OCR Text 4 HPN2907A PNP EPITAXIAL PLANAR TRANSISTOR Description The HPN2907A is designed for general purpose amplifier and high speed, medium...92 Absolute Maximum Ratings * Maximum Temperatures Storage Temperature ............................
Description PNP EPITAXIAL PLANAR TRANSISTOR

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    IDT71V632SA4PF IDT71V632SA4PFI IDT71V632 IDT71V632S5PFI IDT71V632S5PF IDT71V632S6PF IDT71V632S6PF8 IDT71V632S6PFG IDT71V

IDT[Integrated Device Technology]
Part No. IDT71V632SA4PF IDT71V632SA4PFI IDT71V632 IDT71V632S5PFI IDT71V632S5PF IDT71V632S6PF IDT71V632S6PF8 IDT71V632S6PFG IDT71V632S6PFG8 IDT71V632S6PFI IDT71V632S6PFI8 IDT71V632S5PF8 IDT71V632S5PFG IDT71V632S5PFG8 IDT71V632S5PFI8 IDT71V632S7PF IDT71V632S7PF8 IDT71V632S7PFG IDT71V632S7PFI IDT71V632S7PFI8 IDT71V632S8PF IDT71V632S8PF8
OCR Text ... system speed: Commercial: - A4 4.5ns clock access time (117 MHz) Commercial and Industrial: - 5 5ns clock access time (100 MHz) - 6 6ns clo...92 91 90 89 88 87 86 85 84 83 82 81 NC I/O16 I/O17 VDDQ VSSQ I/O18 I/O19 I/O20 I/O21 VSSQ VDDQ I/...
Description 64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter/ Single Cycle Deselect
3.3V 64K x 32 Pipelined
64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter, Single Cycle Deselect
64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter Single Cycle Deselect

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    IRF1010E

International Rectifier
Part No. IRF1010E
OCR Text ...3 srew Max. 84 59 330 200 1.4 20 50 17 4.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V A mJ V/ns C Th...92 (.11 5) 2 .64 (.10 4) 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B . 4 H...
Description Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

File Size 143.91K  /  8 Page

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    IRF1010N

IRF[International Rectifier]
Part No. IRF1010N
OCR Text ...= 1mA 11 m VGS = 10V, ID = 43A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 43A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = ...92 (.115) 2.64 (.104) 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E T O -2 20A B . 4 H E ...
Description Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)

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    IRF1010Z IRF1010ZL IRF1010ZS

IRF[International Rectifier]
Part No. IRF1010Z IRF1010ZL IRF1010ZS
OCR Text ...- --- --- 63 19 24 18 150 36 92 4.5 7.5 2840 420 250 1630 360 560 --- --- 7.5 4.0 --- 20 250 200 -200 95 --- --- --- --- --- --- --- nH --- --- --- --- --- --- --- pF ns nC nA V Conditions VGS = 0V, ID = 250A V/C Reference to 25C, ID...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET

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    IRF1104

IRF[International Rectifier]
Part No. IRF1104
OCR Text ...Units C/W www.irf.com 1 4/24/98 IRF1104 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/T...92 (.115) 2.64 (.104) 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E T O -2 20A B . 4 H E ...
Description Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A??
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?

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    IRF1310N

IRF[International Rectifier]
Part No. IRF1310N
OCR Text ...--- --- --- --- --- 11 56 45 40 4.5 7.5 1900 450 230 Max. Units Conditions --- V V GS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA ...92 (.11 5) 2 .64 (.10 4) 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B . 4 H...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A)
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 92.91K  /  8 Page

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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text ...e Avalanche Energy Rating (Note 4) . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG Maximum Temper...92 0.63 180 1.3 2.0 390 2.7 V ns C 2. Pulse test: pulse width 300s, duty cycle 2%. 3. ...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

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