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  5.7a Datasheet PDF File

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    SP-41A SP-66A

Superworld Electronics
Part No. SP-41A SP-66A
OCR Text ... Model SP-35A SP-41A SP-48A SP-57A SP-66A Output Rating 2VA 5.5VA 8.5VA 13VA 25VA Appearance Dimensions ( Unit : mm ) A B C D 16.5 44.5 33.0 53.0 23.0 51.0 37.0 61.0 23.0 61.0 44.0 67.0 28.0 71.5 51.0 80.0 28.0 80.0 58.0 90.0 Mech...
Description Power Transformers - Bracket UL Type

File Size 124.91K  /  1 Page

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    IRLU8256PBF IRLR8256PBF IRLR8256TRPBF

International Rectifier
Part No. IRLU8256PBF IRLR8256PBF IRLR8256TRPBF
OCR Text ...0 50 0 25 50 75 100 ID TOP 5.57A 8.50A BOTTOM 20A RG 20V VGS D.U.T IAS tp + V - DD A 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 125 150 175 Starting T J , Junction Temperature (C) Fig 1...
Description HEXFET Power MOSFET

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    SSF7510

Silikron Semiconductor Co.,LTD.
Part No. SSF7510
OCR Text ... Test condition: L =0.3mH, ID = 57A, VDD = 47V Pulse width300S; duty cycle1.5% RG = 25Starting TJ = 25C EAS test circuits: BVdss Gate charge test circuit: (c)Silikron Semiconductor CO.,LTD. 2008.8.1 Version : 1.0 page ...
Description Power switching application

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    FDB150N10

Fairchild Semiconductor
Part No. FDB150N10
OCR Text 57A, 15m Features N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and...
Description N-Channel PowerTrench垄莽 MOSFET 100V, 57A, 15m楼?

File Size 485.06K  /  8 Page

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    SSF4006

Silikron Semiconductor Co.,LTD.
Part No. SSF4006
OCR Text ...ndition: L =0.3mH, VDD = 47V,Id=57A Pulse width300S, duty cycle1.5% ; RG = 25 Starting TJ = 25C (c)Silikron Semiconductor CO.,LTD. 2009.6.10 Version : 1.0 page 2of4 SSF4006 EAS Test Circuit: Gate Charge Test Circuit: ...
Description Advanced trench process technology

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    SSM9408GH

Silicon Standard Corp.
Part No. SSM9408GH
OCR Text ... BVDSS RDS(ON) ID 30V 10m 57A G S DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effecti...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 164.01K  /  5 Page

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    PIC1ER-100-JT PIC1ER-100-JTQ PIC1ER-100-JTW PIC163-100-JT PIC163-100-JTQ PIC163-100-JTW PIC163-100-KT PIC163-100-KTQ PIC

RCD COMPONENTS INC.
Part No. PIC1ER-100-JT PIC1ER-100-JTQ PIC1ER-100-JTW PIC163-100-JT PIC163-100-JTQ PIC163-100-JTW PIC163-100-KT PIC163-100-KTQ PIC163-100-KTW PIC163-100-MT PIC163-100-MTQ PIC163-100-MTW PIC163-100-WT PIC163-100-WTQ PIC163-100-WTW PIC163-101-JT PIC163-101-JTQ PIC163-101-JTW PIC163-101-KT PIC163-101-KTQ PIC163-101-KTW PIC163-101-MT PIC163-101-MTQ PIC163-101-MTW PIC163-101-WT PIC163-101-WTQ PIC163-101-WTW PIC1-100-JT PIC1-100-JTQ PIC1-100-JTW PIC1-100-KT PIC1-100-KTQ PIC1-100-KTW PIC1-100-MT PIC1-100-MTQ PIC1-100-MTW PIC1-100-WT PIC1-100-WTQ PIC1-100-WTW PIC1-101-JT PIC1-101-JTQ PIC1-101-JTW PIC1-101-KT PIC1-101-KTQ PIC1-101-KTW PIC1-101-MT PIC1-101-MTQ PIC1-101-MTW PIC1-101-WT PIC1-101-WTQ PIC1-101-WTW PIC1-102-JT PIC1-102-JTQ PIC1-102-JTW PIC1-102-KT PIC1-102-KTQ PIC1-102-KTW PIC1ER-1R0-MT PIC1-1R0-JT PIC1-1R0-JTQ PIC1-1R0-JTW PIC1-1R0-KT PIC1-1R0-KTQ PIC1-1R0-KTW PIC1-1R0-MT PIC1-1R0-MTQ PIC1-1R0-MTW PIC1-1R0-WT PIC1-1R0-WTQ PIC1-1R0-WTW PIC1ER-100-KT PIC1ER-100-KTQ PIC1ER-100-KTW PIC1ER-100-MT PIC1ER-100-MTQ PIC1ER-100-MTW PIC1ER-100-WT PIC1ER-100-WTQ PIC1ER-100-WTW PIC163-1R0-JT PIC163-1R0-JTQ PIC163-1R0-JTW PIC163-1R0-KT PIC163-1R0-KTQ PIC163-1R0-KTW PIC1ER-1R0-WTW PIC1ER-102-WTW PIC1ER-1
OCR Text ... .66A/ .73 .53A/ .72 .90A/ .97 .57A/ .97 .45A/ .95 .80A/ 1.16 .52A/ 1.16 .42A/ 1.10 .75A/ 1.30 .48A/ 1.30 .38A/ 1.24 .65A/ 1.48 .42A/ 1.48 .35A/ 1.53 .60A/ 1.90 .33A/ 1.90 .32A/ 1.90 .50A/ 2.45 .28A/ 2.25 .25A/ 3.12 .48A/ 2.55 .24A/ 2.55 .2...
Description SURFACE MOUNT POWER INDUCTORS

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    TL35 TL35-0016-012 TL35-0016-014 TL35-0016-018 TL35-5000-230 TL35-0016-024 TL35-0016-030 TL35-0016-036 TL35-0016-044 TL3

http://
DB Lectro Inc.
DBLECTRO[DB Lectro Inc]
Part No. TL35 TL35-0016-012 TL35-0016-014 TL35-0016-018 TL35-5000-230 TL35-0016-024 TL35-0016-030 TL35-0016-036 TL35-0016-044 TL35-0016-048 TL35-0032-012 TL35-0032-014 TL35-0032-018 TL35-0032-024 TL35-0032-030 TL35-0032-036 TL35-0032-044 TL35-0032-048 TL35-0050-012 TL35-0050-014 TL35-0050-018 TL35-0050-024 TL35-0050-030 TL35-0050-036 TL35-0050-044 TL35-0050-048 TL35-0070-012 TL35-0070-014 TL35-0070-018 TL35-0070-024 TL35-0070-030 TL35-0070-036 TL35-0070-044 TL35-0070-048 TL35-0100-012 TL35-0100-014 TL35-0100-018 TL35-0100-024 TL35-0100-030 TL35-0100-036 TL35-0100-044 TL35-0100-048 TL35-0150-012 TL35-0150-014 TL35-0150-018 TL35-0150-024 TL35-0150-030 TL35-0150-036 TL35-0150-044 TL35-0150-048 TL35-0250-012 TL35-0250-014 TL35-0250-018 TL35-0250-024 TL35-0250-030 TL35-0250-036 TL35-0250-044 TL35-0250-048 TL35-0350-012 TL35-0350-014 TL35-0350-018 TL35-0350-024 TL35-0350-030 TL35-0350-036 TL35-0350-044 TL35-0350-048 TL35-0500-012 TL35-0500-014 TL35-0500-018 TL35-0500-024 TL35-0500-030 TL35-0500-036 TL35-0500-044 TL35-0500-048 TL35-0650-012 TL35-0650-014 TL35-0650-018 TL35-0650-024 TL35-0650-030 TL35-0650-036 TL35-0650-044 TL35-0650-048 TL35-0850-012 TL35-0850-014 TL35-0850-018 TL35-0850-024 TL35-
OCR Text ...00A 70V C.T. @1.71A 76V C.T. @1.57A 110V C.T. @1.09A 230V C.T. @0.52A 20V C.T. @8.00A 24V C.T. @6.66A 30V C.T. @5.33A 36V C.T. @4.44A 44V C.T. @3.63A 48V C.T. @3.33A 60V C.T. @2.66A 70V C.T. @2.28A 76V C.T. @2.10A 110V C.T. @1.45A 230V C.T....
Description TOROIDAL TRANSFORMER

File Size 190.77K  /  5 Page

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    SSF7509

Silikron Semiconductor Co.,LTD.
Part No. SSF7509
OCR Text ... Test condition: L =0.3mH, ID = 57A, VDD = 47V Pulse width300S; duty cycle1.5% RG = 25Starting TJ = 25C EAS test circuits: BVdss Gate charge test circuit: (c)Silikron Semiconductor CO.,LTD. 2008.8.1 Version : 1.0 page ...
Description Power switching application

File Size 351.25K  /  5 Page

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    AUIRG4PH50S

International Rectifier
Part No. AUIRG4PH50S
OCR Text ... 1.7 IC = 33A VGE = 15V -- IC = 57A See Fig.2, 5 V -- IC = 33A , TJ = 150C 6.0 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 250A -- S VCE = 100V, IC = 33A 250 VGE = 0V, VCE = 1200V A 2.0 VGE = 0V, VCE = 10V, TJ = 25C 1000 VGE = 0V, VCE = 12...
Description INSULATED GATE BIPOLAR TRANSISTOR
57 A, 1200 V, N-CHANNEL IGBT, TO-247AC

File Size 230.57K  /  11 Page

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