Insulated Gate bipolar transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications TOSHIBA Insulated Gate bipolar transistor Silicon N Channel IGBT
NPN Silicon RF transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) NPN硅射频晶体管(对于宽带放大器高达2GHz和快速的非饱和由0.5毫安0毫安的集电极电流开关) transistor UHF bipolar BREITBAND From old datasheet system