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    TPD4113AK

Toshiba Semiconductor
Part No. TPD4113AK
OCR Text ... than by 3.5V. IGBT emitter and FRD anode pin. Unused pin, which is not connected to the chip internally. U-phase bootstrap capacitor connecting pin. U-phase output pin. U and V-phase high-voltage power supply input pin. V-phase bootstrap c...
Description INTELLIGENT POWER DEVICE HIGH VOLTAGE MONOLITHIC SILICON POWER IC

File Size 213.01K  /  21 Page

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    AP50G60SW-HF AP50G60SW-HF-14

Advanced Power Electronics Corp.
Advanced Power Electron...
Part No. AP50G60SW-HF AP50G60SW-HF-14
OCR Text ...collector-emitter voltage units frd reverse recovery time i f =15a frd reverse recovery charge di/dt = 200 a/ s frd forward voltage i f =15a turn-on switching loss turn-off switching loss v ce =390v, i c =33a, v ge =15v, r g =5 ? , inducti...
Description High Speed Switching

File Size 91.96K  /  3 Page

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    7MBR75GE060

Fuji Electric
Part No. 7MBR75GE060
OCR Text ...ter Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Switching time Reverse current Reverse recovery time Forward voltage Reverse current Item Bra...
Description IGBT(600V/75A/PIM)

File Size 648.82K  /  10 Page

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    Atmel
Part No. U2896B
OCR Text ... VVS3 Test Conditions / Pin fND fRD ZRD, ZND VRD, VND CRD, CND Symbol IVSPY VVS# VVSP IVS1A IVS1Y IVS2A IVS2Y IVS3A IVS3Y IVSPA 2.7 VVS# - 0.3 10 2) Min. 100 100 see figure 11 Typ. 2.2 14 13 11 Max. 200 600 600 0.5 5.5 5.5 21 20 22 20 17 30...
Description Modulation PLL for GSM, DCS and PCS Systems

File Size 210.24K  /  13 Page

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    RJH60D0DPQ-E0 RJH60D0DPQ-E0-T2

Renesas Electronics Corporation
Part No. RJH60D0DPQ-E0 RJH60D0DPQ-E0-T2
OCR Text ...cc ? 360 v , v ge = 15 v frd forward voltage v f ? 1.4 1.9 v i f = 22 a note3 frd reverse recovery time t rr ? 100 ? ns frd reverse recovery charge q rr ? 0.15 ? ? c frd peak reverse recovery current i rr ? 4.3 ? a i ...
Description 600V - 22A - IGBT Application: Inverter

File Size 101.12K  /  10 Page

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    RJH60D5DPQ-E0-T2

Renesas Electronics Corporation
Part No. RJH60D5DPQ-E0-T2
OCR Text ... cc ? 360 v, v ge = 15 v frd forward voltage v f ? 1.4 1.9 v i f = 30 a note3 frd reverse recovery time t rr ? 100 ? ns frd reverse recovery charge q rr ? 0.18 ? ? c frd peak reverse recovery current i rr ? 4.2 ? a i ...
Description 600V - 37A - IGBT Application: Inverter

File Size 101.75K  /  10 Page

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    RJH60D6DPQ-E0 RJH60D6DPQ-E0-T2

Renesas Electronics Corporation
Part No. RJH60D6DPQ-E0 RJH60D6DPQ-E0-T2
OCR Text ...v cc ? 360 v, v ge = 15 v frd forward voltage v f ? 1.4 1.9 v i f = 30 a note3 frd reverse recovery time t rr ? 100 ? ns frd reverse recovery charge q rr ? 0.18 ? ? c frd peak reverse recovery current i rr ? 4.2 ? a i ...
Description 600V - 40A - IGBT Application: Inverter

File Size 97.40K  /  10 Page

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    RJH60D7DPQ-E0-T2

Renesas Electronics Corporation
Part No. RJH60D7DPQ-E0-T2
OCR Text ... cc ? 360 v, v ge = 15 v frd forward voltage v f ? 1.4 2.0 v i f = 50 a note3 frd reverse recovery time t rr ? 100 ? ns frd reverse recovery charge q rr ? 0.4 ? ? c frd peak reverse recovery current i rr ? 6.5 ? a i f...
Description 600V - 50A - IGBT Application: Inverter

File Size 102.48K  /  10 Page

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    Renesas
Part No. RJH60D0DPM
OCR Text ...cc ? 360 v , v ge = 15 v frd forward voltage v f ? 1.4 1.9 v i f = 22 a note3 frd reverse recovery time t rr ? 100 ? ns frd reverse recovery charge q rr ? 0.15 ? ? c frd peak reverse recovery current i rr ? 4.4 ? a i ...
Description IGBT

File Size 160.30K  /  10 Page

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    TOSHIBA
Part No. TPD4101K
OCR Text ...y pin 7 is1 igbt emitter and frd anode pin (connect a current detecting resistor to this pin.) 8 nc unused pin, which is not connected to the chip internally. 9 u u-phase output pin 10 bsu u-phase bootstrap capacitor connecting ...
Description Intelligent Power Device High Voltage Monolithic Silicon Power IC

File Size 351.46K  /  28 Page

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