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  field-effect Datasheet PDF File

For field-effect Found Datasheets File :: 13351    Search Time::1.75ms    
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    Wanlida
Part No. LD01N60
OCR Text FIELD EFFECT TRANSISTOR FEATURES Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on...
Description Power FET

File Size 320.86K  /  4 Page

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    P2103NV

List of Unclassifed Manufacturers
ETC
Part No. P2103NV
OCR Text Field Effect Transistor P2103NV SOP-8 PRODUCT SUMMARY V(BR)DSS N-Channel P-Channel 30 -30 RDS(ON) 21m 35m ID 7A -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIO...
Description N- & P-Channel Enhancement Mode Field Effect Transistor

File Size 651.24K  /  8 Page

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    P8006EDG

List of Unclassifed Manufacturers
Part No. P8006EDG
OCR Text field effect transistor p8006edg to-252 lead-free niko-sem 1 aug-19-2004 absolute maximum ratings (t c = 25 c unless otherwise noted) parameters/test conditions symbol limits units drain-source voltage v ds -...
Description P-Channel Logic Level Enhancement

File Size 285.62K  /  5 Page

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    2N4117 2N4117A 2N4118 2N4118A 2N4119

RHOPOINT COMPONENTS
Part No. 2N4117 2N4117A 2N4118 2N4118A 2N4119
OCR Text field-effect transistor absolute maximum ratings at t a = 25?c reverse gate source & reverse gate drain voltage C 40 v continuous forward gate current 50 ma continuous device power dissipation 300 mw power derating (to 175c) 2 mw/c toe72 p...
Description N-Channel Silicon Junction field-effect Transistor

File Size 285.71K  /  17 Page

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    SEC Electronics Inc.
Part No. SS632EUA SS632KSOT SS632KUA SS632LSOT SS632ESOT SS632LUA SS732KUA SS732LSOT SS732LUA SS732KSOT SS732ESOT SS732EUA
OCR Text ... low (turns on) when a magnetic field threshold, b op . after turn-on, the output voltage is v dson . note that the devic es both south a...effect device with high magnetic sensitivity. this multi-purpose latch me ets ments. th am anced t...
Description Hall Latch - High Sensitivity

File Size 253.30K  /  10 Page

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    SS445P SS345PT

Honeywell Solid State Electronics Center
Part No. SS445P SS345PT
OCR Text ...at are operated by the magnetic field from a permanent magnet or an electromagnet, designed to respond to a single north pole (ss345pt) o...effect sensor packages such as t o - 92 or sot - 89, allowing for use in smaller assemblies t...
Description Unipolar Hall-Effect Digital Position Sensors With Built-in Pull-up Resistor

File Size 407.55K  /  4 Page

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    P2804ND5G

List of Unclassifed Manufacturers
ETC
Part No. P2804ND5G
OCR Text Field Effect Transistor_Preliminary P2804ND5G TO-252-5 Lead-Free PRODUCT SUMMARY S2 G2 S1 G1 V(BR)DSS N-Channel P-Channel 40 -40 RDS(ON) 28m 55m ID 7A -5.5A G1 D1/D2 D1 G2 D2 S1 S2 G : GATE D : DRAIN S : ...
Description N- & P-Channel Enhancement Mode Field Effect Transistor_Preliminary

File Size 514.89K  /  8 Page

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    J113 J112 J111

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. J113 J112 J111
OCR Text field-effect transistors Product specification File under Discrete Semiconductors, SC07 July 1993 Philips Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Symmetrical silicon n-channel j...
Description RES CURRENT SENSE .005 OHM .75W
N-channel silicon field-effect transistors

File Size 35.00K  /  6 Page

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