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000KJDG F15S60 AN8053 N4988 DL4745 175CJB ICL71 CM6903
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    New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
Part No. C158M C158E C158PB C158N C158PA
OCR Text ...cal exponential rate of rise of forward block- ing voltage (higher values may cause device switching) lolding current dc gate trigger current dc gate trigger voltage peak on-state voltage turn-on time (delay time -f rise time) delay time co...
Description C158-C159 SCR1200Volts - 110A RMS

File Size 145.98K  /  2 Page

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    BF1210 BF1210-15 BF1210-2015

NXP Semiconductors N.V.
Quanzhou Jinmei Electro...
Part No. BF1210 BF1210-15 BF1210-2015
OCR Text ...n performance during agc n high forward transfer admittance n high forward transfer admittance to input capacitance ratio 1.3 applications n gain controlled low noise ampli?ers for vhf and uhf applications with 5 v supply voltage u digital ...
Description Dual N-channel dual-gate MOSFET
Dual N-channel dual gate MOSFET

File Size 245.00K  /  21 Page

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    BAV20WQ-7-F BAV21WQ-7-F BAV21W-7-F

Diodes Incorporated
Part No. BAV20WQ-7-F BAV21WQ-7-F BAV21W-7-F
OCR Text ...ge v r ( rms ) 71 106 141 v forward continuous current i fm 400 ma average rectified output current i o 200 ma non-repetitive peak forward surge current @t = 1.0ms ...
Description Switching Diodes
SURFACE MOUNT SWITCHING DIODE

File Size 120.62K  /  4 Page

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    BAV20W-G BAV21W-G

Taiwan Semiconductor Company, Ltd
Part No. BAV20W-G BAV21W-G
OCR Text ...voltage v r p d repetitive peak forward current i fm parameter symbol @ tp=1.0ms; ta=25 power dissipation non-repetitive peak forward surge current i o peak reverse voltage - - - i f = 100 ma i f = 200 ma i r - - 1.00 1.25 bav19w-g forwa...
Description High Voltage Fast Switching Diode

File Size 129.29K  /  2 Page

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    ASD723S2

Cystech Electonics Corp.
Part No. ASD723S2
OCR Text ... reverse voltage v rm 30 v forward current i fm 200 ma forward surge current @ 8.3ms single half sine-wave superimposed on rated load(jedec method) i fsm 1 a power dissipation @ t c =25 c p d 250 mw thermal resistanc...
Description Advanced Schottky Barrier Diodes

File Size 210.27K  /  6 Page

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    APTGT75X60T3G

Microsemi Corporation
Part No. APTGT75X60T3G
OCR Text ... j = 150c 500 a i f dc forward current tc = 80c 50 a t j = 25c 1.6 2 v f diode forward voltage i f = 50a v ge = 0v t j = 150c 1.5 v t j = 25c 100 t rr reverse recovery time t j = 150c 15...
Description 3 Phase bridge Trench Field Stop IGBT? Power Module

File Size 269.50K  /  5 Page

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    APD140VRTR-G1 APD140VD-E1

Diodes Incorporated
Part No. APD140VRTR-G1 APD140VD-E1
OCR Text ...ection features ? low forward voltage: 0.5v @ + 25 ? c ? high surge current capacity ? + 1 25 ? c operating junction temperature ? 1 a total ? guard - r ing for stress protection ? do - 41 ? lead -...
Description SCHOTTKY BARRIER RECTIFIERS

File Size 239.60K  /  9 Page

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    2SB954 2SB954A

PANASONIC[Panasonic Semiconductor]
Part No. 2SB954 2SB954A
OCR Text ...to 16.70.3 7.50.2 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw 1:Base 2:Co...
Description Silicon PNP epitaxial planar type(For power amplification)

File Size 45.35K  /  2 Page

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    2SB955 2SB955K

HITACHI[Hitachi Semiconductor]
Part No. 2SB955 2SB955K
OCR Text ...ector peak current C to E diode forward current Collector power dissipation Junction temperature Storage temperature Notes: 1. Value at TC = 25C 2. PW 1 ms 1 shot Symbol VCBO VCEO VEBO IC I C(peak) ID* 1 2 Rating -120 -120 -7 -10 -15 1...
Description Silicon PNP Triple Diffused

File Size 34.71K  /  6 Page

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    SKYWORKS SOLUTIONS INC
Part No. APD0520-219
OCR Text ...ge rating column in table 2 v forward current i f 200 ma operating temperature t op C65 +175 ? c storage temperature t stg C65 +200 ? c note: exposure to maximum rating conditions for extended periods may reduce devic...
Description 50 V, SILICON, PIN DIODE

File Size 427.31K  /  7 Page

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