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  high-frequency Datasheet PDF File

For high-frequency Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |   

    STTH30R03 7630 STTH30R03CG STTH30R03CW STTH30R03CG-TR

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
Part No. STTH30R03 7630 STTH30R03CG STTH30R03CW STTH30R03CG-TR
Description HIGH FREQUENCY SECONDARY RECTIFIER
From old datasheet system
HIGH FREQUENCY SECONDARY RECTIFIER 高频二次整流

File Size 77.56K  /  6 Page

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    UPB1005GS UPB1005GS-E1 UPB1003GS UPB1004GS UPC2753GR UPC2756T UPC2756TB

NEC[NEC]
Part No. UPB1005GS UPB1005GS-E1 UPB1003GS UPB1004GS UPC2753GR UPC2756T UPC2756TB
Description REFERENCE FREQUENCY 16.368 MHz, 2ND IF FREQUENCY 4.092 MHz RF/IF FREQUENCY DOWN-CONVERTER PLL FREQUENCY SYNTHESIZER IC FOR GPS RECEIVER

File Size 161.58K  /  20 Page

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    2SC3803 E000885

Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. 2SC3803 E000885
Description NPN EPITAXIAL TYPE (HIGH FREQUENCY / VIDEO AMPLIFIER/ HIGH SPEED SWITCHING APPLICATIONS)
NPN EPITAXIAL TYPE (HIGH FREQUENCY , VIDEO AMPLIFIER, HIGH SPEED SWITCHING APPLICATIONS)
HIGH FREQUENCY AMPLIFIER APPLICATIONS VODEO AMPLIFIER APPLICATIONS HIGH SPEED SWITCHING APPLICATIONS
From old datasheet system

File Size 174.72K  /  3 Page

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    DPPS16D56K-F DPPS10D12K-F DPPS10D15K-F DPPS10D18K-F DPPS10D1K-F DPPS10D22K-F DPPS10D27K-F DPPS10D33K-F DPPS10D39K-F DPPS

Cornell Dubilier Electr...
http://
Cornell Dubilier Electronics
Part No. DPPS16D56K-F DPPS10D12K-F DPPS10D15K-F DPPS10D18K-F DPPS10D1K-F DPPS10D22K-F DPPS10D27K-F DPPS10D33K-F DPPS10D39K-F DPPS10D47K-F DPPS10D56K-F DPPS10D68K-F DPPS10D82K-F DPPS10S12K-F DPPS10S15K-F DPPS10S18K-F DPPS10S1K-F DPPS10S22K-F DPPS10S27K-F DPPS10S33K-F DPPS16D12K-F DPPS16D15K-F DPPS16D18K-F DPPS16D1K-F DPPS16D22K-F DPPS16S18K-F DPPS16D82K-F DPPS20D82K-F DPPS20D12K-F DPPS20S12K-F DPPS16D27K-F DPPS16D33K-F DPPS16D39K-F DPPS16D47K-F DPPS20D68K-F DPPS20D39K-F DPPS20S15K-F DPPS20S1K-F
Description High Voltage, High Frequency, Ultra High Peak Currents

File Size 214.93K  /  2 Page

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    2SA1683 2SC4414

SANYO[Sanyo Semicon Device]
Part No. 2SA1683 2SC4414
Description high-frequency General-Purpose Amp/ high-frequency Power Amp Applications
high-frequency General-Purpose Amp, high-frequency Power Amp Applications

File Size 115.49K  /  4 Page

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    ADP3806 ADP3806JRU ADP3806JRU-125 ADP3806JRU-126 ADP3806JRU-12.5 ADP3806JRU-12.6

AD[Analog Devices]
ANALOG DEVICES INC
Part No. ADP3806 ADP3806JRU ADP3806JRU-125 ADP3806JRU-126 ADP3806JRU-12.5 ADP3806JRU-12.6
Description 0.3-25V; high frequency switch mode Li-Ion battery charger. For portable computers, fast chargers
Analog IC
high-frequency Switch Mode Li-Ion Battery Charger
2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO24

File Size 195.96K  /  12 Page

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    CREE POWER
Part No. W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

File Size 273.34K  /  17 Page

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    2SK436

Sanyo Semicon Device
Renesas Electronics Corporation
Part No. 2SK436
Description high-frequency/Low-Frequency General-Purpose Amp Applications
high-frequency,Low-Frequency General-Purpose Amp Applications

File Size 162.40K  /  6 Page

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    2SC4215 E000919

Toshiba Semiconductor
Part No. 2SC4215 E000919
Description NPN EPITAXIAL PLANAR TYPE (HIGH FREQUENCY FM/ RF/ MIX/ IF AMPLIFIERAPPLICATIONS)
HIGH FREQUENCY AMPLIFIER APPLICATIONS FM, RF, MIX, IF AMPLIFIER APPLICATIONS
From old datasheet system
NPN EPITAXIAL PLANAR TYPE (HIGH FREQUENCY FM, RF, MIX, IF AMPLIFIERAPPLICATIONS)

File Size 171.93K  /  4 Page

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    2SC5434 2SC5434-T1

NEC[NEC]
NEC Corp.
Part No. 2SC5434 2SC5434-T1
Description Reduced noise high frequency amplification transistor
NPN EPITAXIAL SILICON TRANSISTOR FOR high-frequency LOW-NOISE AMPLIFICATION
High-Frequecy Low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体

File Size 59.68K  /  8 Page

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For high-frequency Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |   

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