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SIEMENS[Siemens Semiconductor Group] SIEMENS AG SIEMENS A G
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Part No. |
BAT15-013 BAT15-013S BAT15-033 BAT15-034 BAT15-043 BAT15-063 BAT15-064 BAT15-073 BAT15-093 BAT15-094 BAT15-103 BAT15-113 BAT15-114 BAT15-123 BAT15-124 Q62702A1180 Q62702A1178 BAT15 BAT15-124S BAT15-013ES BAT15-013H BAT15-013P BAT15-014 BAT15-014ES BAT15-014H BAT15-014P BAT15-014S BAT15-033ES BAT15-033H BAT15-033P BAT15-033S BAT15-034ES BAT15-034H BAT15-034P BAT15-034S BAT15-043ES BAT15-043H BAT15-043P BAT15-043S BAT15-044 BAT15-044ES BAT15-044H BAT15-044P BAT15-044S BAT15-063ES BAT15-063H BAT15-063P BAT15-063S BAT15-064ES BAT15-064H BAT15-064P BAT15-064S BAT15-073ES BAT15-073H BAT15-073P BAT15-074 BAT15-074ES BAT15-074H BAT15-074P BAT15-074S BAT15-093ES BAT15-093H BAT15-093P BAT15-093S BAT15-094ES BAT15-094H BAT15-094P BAT15-094S BAT15-103ES BAT15-103H BAT15-103P BAT15-103S BAT15-104 BAT15-104ES BAT15-104H BAT15-104P BAT15-104S BAT15-113ES BAT15-113H BAT15-113P BAT15-113S BAT15-114ES BAT15-114H BAT15-114P BAT15-114S BAT15-123ES BAT15-123H BAT15-123P BAT15-123S BAT15-124ES BAT15-124H BAT15-124P BAT15-073S
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Description |
From old datasheet system Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) 330MHz Buffered Video Switches Crosspoint Building Blocks Single/Dual/Quad, Wide-Bandwidth, Low-Power, Single-Supply Rail-to-Rail I/O Op Amps 500MHz, Low-Power Op Amps BBG LO PWR MULT MOD H FRE; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Tape and Reel; Qty per Container: 2500 400MHz, Ultra-Low-Distortion Op Amps 250MHz, Broadcast-Quality, Low-Power Video Op Amps HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor medium barrier diodes for detector and mixer applications) SILICON, medium BARRIER SCHOTTKY, MIXER DIODE HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor medium barrier diodes for detector and mixer applications) 伊雷尔硅肖特基二极管(伊雷尔分立半导体和微波探测器和培养基的应用垒二极管混频器) 350MHz, Ultra-Low-Noise Op Amps SILICON, medium BARRIER SCHOTTKY, MIXER DIODE Single/Dual/Quad, 400MHz, Low-Power, Current Feedback Amplifiers SILICON, medium BARRIER SCHOTTKY, MIXER DIODE
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File Size |
86.72K /
8 Page |
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Continental Device India, Ltd. CDIL[Continental Device India Limited] Continental Device Indi...
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Part No. |
CFA1012 CFA1012O CFC2562O CFA1012Y CFC2562Y
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Description |
25.000W medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. Complementary CFA1012Y 25.000W medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFA1012O 25.000W medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFC2562O PNP SILICON PLANAR POWER TRANSISTOR 进步党硅平面功率晶体 25.000W medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 120 - 240 hFE. Complementary CFC2562Y
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File Size |
135.13K /
3 Page |
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it Online |
Download Datasheet |
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Continental Device India Limited
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Part No. |
C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2688R CSC2688Y
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Description |
10.000W medium Power NPN Plastic Leaded Transistor. 300V Vceo, 200.000A Ic, 40 - 250 hFE. 10.000W medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 250 hFE. 10.000W medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 160 - 250 hFE. 10.000W medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 60 - 120 hFE. 10.000W medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 80 hFE. 10.000W medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 100 - 200 hFE.
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File Size |
136.14K /
2 Page |
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it Online |
Download Datasheet |
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Price and Availability
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