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  mos-fets Datasheet PDF File

For mos-fets Found Datasheets File :: 1278    Search Time::1.562ms    
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    TP0610T

Supertex, Inc.
Supertex Inc
SUTEX[Supertex, Inc]
Part No. TP0610T
OCR Text ...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of sw...
Description P-Channel Enhancement-Mode Vertical DMOS FETs

File Size 447.82K  /  4 Page

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    TP0620 TP0620N3

SUTEX[Supertex, Inc]
Part No. TP0620 TP0620N3
OCR Text ...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of sw...
Description P-Channel Enhancement-Mode Vertical DMOS FETs

File Size 470.49K  /  4 Page

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    TP2104 TP2104K1 TP2104N3 TP2104ND

SUTEX[Supertex, Inc]
Supertex Inc
Part No. TP2104 TP2104K1 TP2104N3 TP2104ND
OCR Text ...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of sw...
Description P-Channel Enhancement-Mode Vertical DMOS FETs

File Size 449.29K  /  4 Page

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    TP2502 TP2502N8 TP2502ND

Supertex, Inc.
Supertex Inc
SUTEX[Supertex, Inc]
Supertex Inc
Part No. TP2502 TP2502N8 TP2502ND
OCR Text ...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of sw...
Description P-Channel Enhancement-Mode Vertical DMOS FETs 0.63 A, 20 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-243AA

File Size 449.16K  /  4 Page

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    TP2510 TP2510N8 TP2510ND

SUTEX[Supertex, Inc]
Part No. TP2510 TP2510N8 TP2510ND
OCR Text ...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of sw...
Description P-Channel Enhancement-Mode Vertical DMOS FETs

File Size 450.11K  /  4 Page

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    TP2520 TP2520N8 TP2522 TP2522N8 TP2522ND

Supertex, Inc.
SUTEX[Supertex, Inc]
Part No. TP2520 TP2520N8 TP2522 TP2522N8 TP2522ND
OCR Text ...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of sw...
Description P-Channel Enhancement-Mode Vertical DMOS FETs 0.26 A, 220 V, 12 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-243AA

File Size 450.18K  /  4 Page

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    TP2535 TP2535N3 TP2540 TP2540N3 TP2540N8 TP2540ND

SUTEX[Supertex, Inc]
Supertex Inc
Part No. TP2535 TP2535N3 TP2540 TP2540N3 TP2540N8 TP2540ND
OCR Text ...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of sw...
Description P-Channel Enhancement-Mode Vertical DMOS FETs

File Size 473.56K  /  4 Page

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    TP2635 TP2635N3 TP2640 TP2640LG TP2640N3 TP2640ND

SUTEX[Supertex, Inc]
Supertex Inc
Part No. TP2635 TP2635N3 TP2640 TP2640LG TP2640N3 TP2640ND
OCR Text ...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of sw...
Description P-Channel Enhancement-Mode Vertical DMOS FETs

File Size 450.78K  /  4 Page

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    TP5335 TP5335K1 TP5335NW

SUTEX[Supertex, Inc]
Part No. TP5335 TP5335K1 TP5335NW
OCR Text ...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of sw...
Description P-Channel Enhancement-Mode Vertical DMOS FETs

File Size 429.61K  /  2 Page

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For mos-fets Found Datasheets File :: 1278    Search Time::1.562ms    
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