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International Rectifier
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Part No. |
IRF3703 IRF3703PbF
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OCR Text |
...wing the g integral reverse S p-n junction diode. TJ = 25C, IS = 76A, VgS = 0V TJ = 25C, IF = 76A, VDS = 16V di/dt = 100A/s
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www.ir...b R )D SS tp
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Dra... |
Description |
30V Single n-Channel HEXFET Power MOSFET in a TO-220Ab package<br>Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?<br>Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A)<br>Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?)<br>Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)<br>
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File Size |
93.04K /
8 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier] International Rectifier, Corp.
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Part No. |
IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR
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OCR Text |
...howing the g integral reverse p-n junction diode. S TJ = 25C, IS = 35.5A, VgS = 0V TJ = 125C, IS = 35.5A, VgS = 0V TJ = 25C, IF = 35.5A, V...b. basic gate Charge Test circuit and Waveforms
300
200
15V
V (b R )D S S tp VD S L DRIV... |
Description |
20V Single n-Channel HEXFET Power MOSFET in a D2-Pak package<br>20V Single n-Channel HEXFET Power MOSFET in a TO-262 package<br>20V Single n-Channel HEXFET Power MOSFET in a TO-220Ab package<br>Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?<br>Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A)<br>Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A)<br>Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?)<br>Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A)<br>COnnECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-board; Ways, no. of:4; Termination method:Crimp; Rows, no. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET(减振钢板基本\u003d 20V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 77A条?<br>TRAnSISTOR | MOSFET | n-CHAnnEL | 20V V(bR)DSS | 77A I(D) | TO-263Ab<br>
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File Size |
123.62K /
10 Page |
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it Online |
Download Datasheet |
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International Rectifier, Corp. IRF[International Rectifier]
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Part No. |
IRF3709 IRF3709L IRF3709S IRF370b9L IRF370b9S F3709S
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OCR Text |
...wing the g integral reverse S p-n junction diode. TJ = 25C, IS = 30A, VgS = 0V TJ = 125C, IS = 30A, VgS = 0V TJ = 25C, IF = 30A, VR=15V di...b R )D SS tp
400
200
0 25 50 75 100 125 150
Starting TJ , Junction Temperature( C)
F... |
Description |
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?<br>Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET(减振钢板基本\u003d 30V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 90A型?<br>Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A)<br>Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A)<br>Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?)<br>Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??<br>
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File Size |
120.60K /
11 Page |
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it Online |
Download Datasheet |
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Price and Availability
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