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  RF5-12-T-02-50 Datasheet PDF File

For RF5-12-T-02-50 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |   

    IRF5805

IRF[International Rectifier]
Part No. IRF5805
Description Power MOSFET(Vdss=-30V)

File Size 125.03K  /  9 Page

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HUA FENG CIRCUIT





    IRF5801

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF5801
Description Power MOSFET(Vdss=200V, Rds(on)max=2.2ohm, Id=0.6A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rdson)最大值\u003d 2.2ohm,身份证\u003d 0.6A的)
Power MOSFET(Vdss=200V/ Rds(on)max=2.2ohm/ Id=0.6A)

File Size 119.47K  /  8 Page

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    IRF5806

IRF[International Rectifier]
Part No. IRF5806
Description Power MOSFET(Vdss=-20V)

File Size 154.77K  /  8 Page

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    Taiwan Semiconductor
Part No. FRF504G
Description Rectifier: Fast

File Size 68.63K  /  2 Page

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    IRF5800

International Rectifier, Corp.
Part No. IRF5800
Description Power MOSFET(Vdss=-30V, Rds(on)=0.085ohm) 功率MOSFET(减振钢板基本\u003d- 30V的,的Rds(on)\u003d 0.085ohm
Power MOSFET(Vdss=-30V/ Rds(on)=0.085ohm)

File Size 97.25K  /  8 Page

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    IRF520N

International Rectifier, Corp.
Part No. IRF520N
Description Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A) 功率MOSFET(减振钢板基本\u003d 100伏,的Rds(on)\u003d 0.20欧姆,身份证\u003d 9.7A
Power MOSFET(Vdss = 100 V/ Rds(on) = 0.20 Ohm/ Id= 9.7A)
Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A)

File Size 113.03K  /  8 Page

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Part No. FRF505G
Description 5 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB

File Size 975.75K  /  3 Page

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    IRF520V

IRF[International Rectifier]
Part No. IRF520V
Description Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)

File Size 146.01K  /  8 Page

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    IRF540 IRF540S

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. IRF540 IRF540S
Description N-channel TrenchMOS TM transistor
N-channel TrenchMOS transistor

File Size 84.84K  /  9 Page

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    MRF5175

Advanced Semiconductor
Part No. MRF5175
Description 1NPN SILICON RF POWER TRANSISTOR

File Size 28.40K  /  1 Page

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