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  ruggedness Datasheet PDF File

For ruggedness Found Datasheets File :: 7622    Search Time::1.359ms    
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    GRM21BR71H104KA01B GRM21BR71H105KA12L 2508051107Y0 ATC600F180JT250XT ATC600F560JT250XT ATC600F2R7BT250XT ATC600F240JT250

Freescale Semiconductor, Inc
Freescale Semiconductor...
Part No. GRM21BR71H104KA01B GRM21BR71H105KA12L 2508051107Y0 ATC600F180JT250XT ATC600F560JT250XT ATC600F2R7BT250XT ATC600F240JT250XT ATC600F241JT250XT ATC600F270JT250XT FR4 2518065007Y6 ATC600F3R0BT250XT ATC600F3R9BT250XT ATC600F470JT250XT 0806SQ-5N5GLC GRM31CR61H106KA12L ATC600F680JT250XT ATC100B3R9JT500XT ATC100B100JT500XT ATC100B181JT200XT ATC100B201JT300XT ATC100B270JT500XT ATC100B360JT500XT 0906-2KLC 0906-3JLC AMP-9-146305-0 CDR33BX104AKWS T491X226K035AT AFT05MS031N AFT05MS031GNR1 AFT05MS031NR1 SME63V471M12X25LL 1812SMS-56NJLC 0806SQ5N5GLC 0806SQ-6N0GLC RG2012N-620-BT1 ATC600F8R2BT250XT 2743021447 AD255A C0805C103K5RAC ATC100B7R5JT500XT ATC100B6R2JT500XT
OCR Text ruggedness n--channel enhancement--mode lateral mosfets designed for mobile two--way radio applications with frequencies from 136 to 520 mhz. the high gain, ruggedness and broadband performance of these devices make them ideal for large--si...
Description RF Power LDMOS Transistors

File Size 1,432.30K  /  27 Page

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    GRM21BR72A103KA01B ATC600F220JT250XT ATC600F300JT250XT ATC600F5R6BT250XT ATC600F100JT250XT ATC600F120JT250XT GRM31CR71H2

Freescale Semiconductor, Inc
Freescale Semiconductor, In...
Freescale Semiconductor...
Part No. GRM21BR72A103KA01B ATC600F220JT250XT ATC600F300JT250XT ATC600F5R6BT250XT ATC600F100JT250XT ATC600F120JT250XT GRM31CR71H225KA88L ATC100A220JT150XT ATC100B3R6CT500XT ATC100B3R9CT500XT ATC100B560CT500XT ATC200B103KT50XT RO4350B AFT09MS031GNR1 AFT09MS031NR1 MCGPR35V337M10X16-RH TPSD226M025R0200 0908SQ17NJLC 0805WL6R8KT C1206C104K1RAC-TU ATC600F6R8BT250XT AMP-9-146305-0 ATC100B100JT500XT S1000-2
OCR Text ruggedness n--channel enhancement--mode lateral mosfets designed for mobile two--way radio applications with frequencies from 764 to 941 mhz. the high gain, ruggedness and broadband performance of these devices make them ideal for large--si...
Description RF Power LDMOS Transistors

File Size 979.62K  /  21 Page

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    AN601

Vishay Siliconix
Part No. AN601
OCR Text ...conductor industry defines this ruggedness as the capability to withstand avalanche currents when subjected to unclamped inductive switching. historically, mosfet manufacturers chose to quantify ruggedness, not based principally on individu...
Description Unclamped Inductive Switching Rugged MOSFETs

File Size 126.11K  /  8 Page

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    BLF879P

NXP Semiconductors
Part No. BLF879P
OCR Text ...al applications. the excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. [1] measured [dbc] with delta marker at 4.3 mhz from center frequency. [2] par (of output signal) at 0.01 % probab...
Description UHF power LDMOS transistor

File Size 403.49K  /  15 Page

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    BLF888AS

NXP Semiconductors
Part No. BLF888AS
OCR Text ...al applications. the excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. [1] measured at ? = 10 %; t p = 100 ? s. [2] measured [dbc] with delta marker at 4.3 mhz from center frequency...
Description UHF power LDMOS transistor

File Size 446.59K  /  17 Page

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    MRFE6VP100H MRFE6VP100HR5 MRFE6VP100HSR5

Freescale Semiconductor, Inc
Part No. MRFE6VP100H MRFE6VP100HR5 MRFE6VP100HSR5
OCR Text ruggedness n--channel enhancement--mode lateral mosfets rf power transistors designed for both narrowband and broadband ism, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 mhz. these devices are fabricated us...
Description RF Power LDMOS Transistors

File Size 1,209.46K  /  20 Page

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    IPP60R125P6 IPA60R125P6 IPW60R125P6 IPX60R125P6

Infineon Technologies AG
Infineon Technologies A...
Part No. IPP60R125P6 IPA60R125P6 IPW60R125P6 IPX60R125P6
OCR Text ...atures ?increasedmosfetdv/dtruggedness ?extremelylowlossesduetoverylowfomrdson*qgandeoss ?veryhighcommutationruggedness ?easytouse/drive ?pb-freeplating,halogenfreemoldcompound ?qualifiedforindustrialgradeap...
Description LED Driver IC and Lighting IC
Increased MOSFET dv/dt ruggedness
Metal Oxide Semiconductor Field Effect Transistor

File Size 2,732.11K  /  18 Page

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    IPP60R330P6

Infineon Technologies AG
Part No. IPP60R330P6
OCR Text ...atures ?increasedmosfetdv/dtruggedness ?extremelylowlossesduetoverylowfomrdson*qgandeoss ?veryhighcommutationruggedness ?easytouse/drive ?pb-freeplating,halogenfreemoldcompound ?qualifiedforindustrialgradeap...
Description LED Driver IC and Lighting IC

File Size 2,868.58K  /  18 Page

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    MRFE6VP61K25HSR6 MRFE6VP61K25HR6 MRFE6VP61K25HR612

Freescale Semiconductor, Inc
Part No. MRFE6VP61K25HSR6 MRFE6VP61K25HR6 MRFE6VP61K25HR612
OCR Text ruggedness n--channel enhancement--mode lateral mosfets these high ruggedness devices are designed for use in high vswr industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applic...
Description RF Power LDMOS Transistors

File Size 1,167.79K  /  21 Page

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    SIEMENS AG
Part No. SPP47N10L
OCR Text ... in addition, the out- standing ruggedness of these transistors obviates the need for protection circuits. siemens semiconductors introduced the s-fet technology for power mosfet transistors in 1996. the 55/60-v transistors which were the f...
Description 100-V MOS transistors in S-FET technology( 采用S-FET 技术制作的 100-V MOS 型晶体管) 47 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 235.58K  /  2 Page

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For ruggedness Found Datasheets File :: 7622    Search Time::1.359ms    
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