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  si-gate Datasheet PDF File

For si-gate Found Datasheets File :: 6053    Search Time::2.969ms    
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    IRHNJ54130 IRHNJ57130 IRHNJ53130 IRHNJ58130 JANSF2N7481U3 JANSG2N7481U3 JANSH2N7481U3 JANSR2N7481U3

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRHNJ54130 IRHNJ57130 IRHNJ53130 IRHNJ58130 JANSF2N7481U3 JANSG2N7481U3 JANSH2N7481U3 JANSR2N7481U3
OCR Text ...ion Level IRHNJ57130 100K Rads (Si) IRHNJ53130 300K Rads (Si) IRHNJ54130 600K Rads (Si) IRHNJ58130 RDS(on) 0.06 0.06 0.06 ID 22A* 22A* 22A* ...gate charge reduces the power losses in switching applications such as DC to DC converters and motor...
Description RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) 抗辐射功率MOSFET表面贴装系统(SMD - 0.5
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package
100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package

File Size 127.38K  /  8 Page

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    RHLG77110 IRHLG77110 IRHLG73110

International Rectifier
Part No. RHLG77110 IRHLG77110 IRHLG73110
OCR Text ...l RDS(on) IRHLG77110 100K Rads (Si) 0.22 IRHLG73110 300K Rads (Si) 0.22 ID 1.8A 1.8A 2N7612M1 IRHLG77110 100V, Quad N-CHANNEL TECHNOLOGY...gate rupture and single event burnout immunity. These devices are used in applications such as curre...
Description RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB
RADIATION HARDENED LOGIC LEVEL POWER MOSFET LOGIC LEVEL POWER MOSFET

File Size 207.44K  /  9 Page

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    SC1404 SC1404ISSTR SC1404ITSTR

Semtech Corporation
Part No. SC1404 SC1404ISSTR SC1404ITSTR
OCR Text ... Boost voltages Power Ground to Si gnal Ground Logi c Supply Hi gh-si de Gate D ri ve Supply Hi gh-si de Gate D ri ve Outputs Low-si de Gate D ri ve Outputs and C urrent Sense i nputs Logi c i nputs/outputs MAXIMU M -0.3 to +30 -2.0 (transi...
Description Mobile Multi-Output PWM Controller with Virtual Current SenseTM

File Size 459.81K  /  25 Page

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    IRHLG7670Z4

International Rectifier
Part No. IRHLG7670Z4
OCR Text ...30Z4 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on) 0.6 1.25 0.6 1.25 ID 1.07A -0.71A 1.07A -0.71A CHANNEL N P N P MO-036AB Int...gate rupture and single event burnout immunity. These devices are used in applications such as curre...
Description RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB)

File Size 309.28K  /  16 Page

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    IRHLA7970Z4

International Rectifier
Part No. IRHLA7970Z4
OCR Text ...S(on) ID IRHLA7970Z4 100K Rads (Si) 1.36 -0.56A IRHLA7930Z4 300K Rads (Si) 1.36 -0.56A IRHLA7970Z4 60V, Quad P-CHANNEL TECHNOLOGY ...gate rupture and single event burnout immunity. These devices are used in applications such as curre...
Description RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (14-LEAD FLAT PACK

File Size 221.03K  /  9 Page

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    IRHLA770Z4

International Rectifier
Part No. IRHLA770Z4
OCR Text ...l RDS(on) IRHLA770Z4 100K Rads (Si) 0.60 IRHLA730Z4 300K Rads (Si) 0.60 ID 0.8A 0.8A 2N7620M2 IRHLA770Z4 60V, Quad N-CHANNEL TECHNOLOGY ...gate rupture and single event burnout immunity. These devices are used in applications such as curre...
Description RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (14-LEAD FLAT PACK

File Size 221.07K  /  9 Page

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    TLE638907 TLE6389-07 TLE6389-2GV50

Infineon Technologies AG
Part No. TLE638907 TLE6389-07 TLE6389-2GV50
OCR Text ...F C BDS= 220 nF 11 BDS VS 7 SI SI_GND 6 14 CS 12 GDRV D1 COUT = 100 F M1: Infineon BSO613SPV Infineon BSP613P D1: Motorola MBRD360...gate-source voltage to supply the driver of the PMOS power stage. Gate drive output. Connect to the ...
Description Step-Down DC/DC Controller

File Size 446.60K  /  38 Page

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    IRHN7450 2115 IRHN8450 JANSF2N7270U JANSH2N7270U JANSR2N7270U

IRF[International Rectifier]
Part No. IRHN7450 2115 IRHN8450 JANSF2N7270U JANSH2N7270U JANSR2N7270U
OCR Text ...ion doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, International Rectifier's RAD HARD HEXFETs r...gate drive circuitry is required. These devices are also capable of surviving transient ionization p...
Description HEXFET TRANSISTOR
From old datasheet system
RADIATION HARDENED POWER MOSFET
500V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
500V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
500V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package

File Size 306.22K  /  12 Page

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    2N7632UC IRHLUC7630Z4 IRHLUC7670Z4 IRHLUC7670Z4-15

International Rectifier
Part No. 2N7632UC IRHLUC7630Z4 IRHLUC7670Z4 IRHLUC7670Z4-15
OCR Text ...30Z4 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on) 0.75 1.60 0.75 1.60 ID 0.89A -0.65A 0.89A -0.65A CHANNEL N P N P LCC-6 Inte...gate rupture and single event burnout immunity. The device is ideal when used to interface directly ...
Description RADIATION HARDENED60V, Combination 1N-1P-CHANNELLOGIC LEVEL POWER MOSFET
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT
Simple Drive Requirements

File Size 299.17K  /  16 Page

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    IRF[International Rectifier]
Part No. IRHM4250 IRHM7250 IRHM8250 IRHM3250 JANSR2N7269
OCR Text ...ation Level IRHM7250 100K Rads (Si) IRHM3250 300K Rads (Si) IRHM4250 IRHM8250 600K Rads (Si) RDS(on) 0.10 0.10 0.10 ID 26A 26A 26A 26A IR...gate charge reduces the power losses in switching applications such as DC to DC converters and motor...
Description RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)

File Size 272.45K  /  13 Page

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For si-gate Found Datasheets File :: 6053    Search Time::2.969ms    
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