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				Hi-Sincerity Microelectronics HSMC[Hi-Sincerity Mocroelectronics] Hi-Sincerity Mocroelectroni...
Part No.	HE8050S
OCR Text	...urrents (Ta=25C) VCBO Collector to Base Voltage ........................................................................................ 25 ...92 Dimension A B 12 3 Spec. No. : HE6110 Issued Date : 1992.09.30 Revised Date : 2001.07.18 Pag...
Description	NPN EPITAXIAL PLANAR TRANSISTOR
File Size	37.94K / 4 Page	View it Online	Download Datasheet

				Hi-Sincerity Microelectronics HSMC[Hi-Sincerity Mocroelectronics]
Part No.	HE8050
OCR Text	...urrents (Ta=25C) VCBO Collector to Base Voltage ........................................................................................ 40 ...92 Dimension A B 12 3 Spec. No. : HE6112 Issued Date : 1992.09.30 Revised Date : 2001.08.13 Pag...
Description	NPN EPITAXIAL PLANAR TRANSISTOR
File Size	35.35K / 3 Page	View it Online	Download Datasheet

				Hi-Sincerity Microelectronics HSMC[Hi-Sincerity Mocroelectronics]
Part No.	HPN2907A PN2907A
OCR Text	...y Use with NPN Type HPN2222A to-92 Absolute Maximum Ratings * Maximum Temperatures Storage Temperature ........................................................................................................ -55 ~ +150 C Junction Tem...
Description	PNP EPITAXIAL PLANAR TRANSISTOR
File Size	36.46K / 4 Page	View it Online	Download Datasheet

				IDT[Integrated Device Technology]
Part No.	IDT71V632SA4PF IDT71V632SA4PFI IDT71V632 IDT71V632S5PFI IDT71V632S5PF IDT71V632S6PF IDT71V632S6PF8 IDT71V632S6PFG IDT71V632S6PFG8 IDT71V632S6PFI IDT71V632S6PFI8 IDT71V632S5PF8 IDT71V632S5PFG IDT71V632S5PFG8 IDT71V632S5PFI8 IDT71V632S7PF IDT71V632S7PF8 IDT71V632S7PFG IDT71V632S7PFI IDT71V632S7PFI8 IDT71V632S8PF IDT71V632S8PF8
OCR Text	...e performance for processors up to 117MHz. The IDT71V632 SRAM contains write, data, address, and control registers. Internal logic allows th...92 91 90 89 88 87 86 85 84 83 82 81 NC I/O16 I/O17 VDDQ VSSQ I/O18 I/O19 I/O20 I/O21 VSSQ VDDQ I/...
Description	64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter/ Single Cycle Deselect 3.3V 64K x 32 Pipelined 64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter, Single Cycle Deselect 64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter Single Cycle Deselect
File Size	271.54K / 19 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1010E
OCR Text	... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...92 (.11 5) 2 .64 (.10 4) 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B . 4 H...
Description	Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?
File Size	143.91K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010N
OCR Text	... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...92 (.115) 2.64 (.104) 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E T O -2 20A B . 4 H E ...
Description	Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?) Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)
File Size	154.40K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010Z IRF1010ZL IRF1010ZS
OCR Text	...Repetitive Avalanche Allowed up to Tjmax G VDSS = 55V RDS(on) = 7.5m S Description Specifically designed for Automotive application...92 4.5 7.5 2840 420 250 1630 360 560 --- --- 7.5 4.0 --- 20 250 200 -200 95 --- --- --- --- --- --- ...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package AUTOMOTIVE MOSFET
File Size	298.51K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1104
OCR Text	... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...92 (.115) 2.64 (.104) 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E T O -2 20A B . 4 H E ...
Description	Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A) Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?) Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?? Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A) Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?
File Size	97.26K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1310N
OCR Text	... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...92 (.11 5) 2 .64 (.10 4) 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B . 4 H...
Description	Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A) Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)
File Size	92.91K / 8 Page	View it Online	Download Datasheet

				HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	IRF234 IRF235 IRF236 IRF237
OCR Text	...esigned, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MO...92 0.63 180 1.3 2.0 390 2.7 V ns C 2. Pulse test: pulse width 300s, duty cycle 2%. 3. ...
Description	8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
File Size	68.51K / 7 Page	View it Online	Download Datasheet

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