| |
|
 |
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| Part No. |
APT20M22JVFR
|
| OCR Text |
...tching
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
* 100% Avalanche Tested * P...200V
APT Reserves the right to change, without notice, the specifications and information contained... |
| Description |
Aluminum Electrolytic Radial Leaded Low Profile Capacitor; Capacitance: 1000uF; Voltage: 35V; Case Size: 16x25 mm; Packaging: Bulk
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 97A 0.022 Ohm
|
| File Size |
73.10K /
4 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
|
| Part No. |
APT20M45BVFR
|
| OCR Text |
...tching
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
* 100% Avalanche Tested
FR...200V.
APT Reserves the right to change, without notice, the specifications and information containe... |
| Description |
56 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Power MOS V is a new generation of high voltage N-Channel enhancement
POWER MOS V 200V 56A 0.045 Ohm
|
| File Size |
94.71K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
ADPOW[Advanced Power Technology]
|
| Part No. |
APT20M45SVFR
|
| OCR Text |
...tching
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
* 100% Avalanche Tested
FR...200V.
APT Reserves the right to change, without notice, the specifications and information containe... |
| Description |
POWER MOS V 200V 56A 0.045 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
| File Size |
97.57K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| Part No. |
FS5UM-9
|
| OCR Text |
...RAIN e SOURCE r DRAIN e
q
VDSS ................................................................................ 450V rDS (ON) (MAX) .....200V, ID = 2A, VGS = 10V, RGEN = RGS = 50
IS = 2A, VGS = 0V Channel to case
PERFORMANCE CURVES... |
| Description |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE 5 A, 450 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
| File Size |
47.10K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
Powerex, Inc.
Powerex Power Semiconductors
Mitsubishi Electric Corporation
|
| Part No. |
FS5UM-10
|
| OCR Text |
...RAIN e SOURCE r DRAIN e
q
VDSS ................................................................................ 500V rDS (ON) (MAX) .....200V, ID = 2A, VGS = 10V, RGEN = RGS = 50
IS = 2A, VGS = 0V Channel to case
PERFORMANCE CURVES... |
| Description |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE 5 A, 500 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
| File Size |
47.31K /
4 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
