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Microsemi
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| Part No. |
APT40M70JVFR
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| OCR Text |
...s = -i d [cont.], di / dt = 100a/s) reverse recovery charge(i s = -i d [cont.], di / dt = 100a/s) peak recovery current(i s = -i d [cont.], di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c... |
| Description |
FREDFETs
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| File Size |
65.32K /
4 Page |
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Microsemi
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| Part No. |
APT20M11JFLL
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| OCR Text |
... time(i s = -176a, di / dt = 100a/s) reverse recovery charge(i s = -176a, di / dt = 100a/s) peak recovery current(i s = -176a, di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps min typ ma... |
| Description |
FREDFETs
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| File Size |
158.75K /
5 Page |
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it Online |
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Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
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| Part No. |
FK10UM-9
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| OCR Text |
...ditions ID = 1mA, VGS = 0V IG = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 450V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 450 30 -- -- 2 -- -- 3.3 -- --... |
| Description |
HIGH-SPEED SWITCHING USE 10 A, 450 V, 0.92 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| File Size |
57.44K /
5 Page |
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it Online |
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Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
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| Part No. |
FK14KM-10
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| OCR Text |
...ditions ID = 1mA, VGS = 0V IG = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 500V, VGS = 0V ID = 1mA, VDS = 10V ID = 7A, VGS = 10V ID = 7A, VGS = 10V ID = 7A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 500 30 -- -- 2 -- -- 4.5 -- --... |
| Description |
HIGH-SPEED SWITCHING USE
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| File Size |
53.25K /
5 Page |
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it Online |
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
FK14KM-10
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| OCR Text |
...ditions ID = 1mA, VGS = 0V IG = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 500V, VGS = 0V ID = 1mA, VDS = 10V ID = 7A, VGS = 10V ID = 7A, VGS = 10V ID = 7A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 500 30 -- -- 2 -- -- 4.5 -- --... |
| Description |
HIGH-SPEED SWITCHING USE
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| File Size |
59.02K /
5 Page |
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it Online |
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Diodes
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| Part No. |
APT27HZ-G1
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| OCR Text |
...e bv ces 800 ? ? v i c = 100a, v be = 0v collector-emitter breakdown voltage bv ceo 450 ? ? v i c = 100a emitter-base breakdown voltage bv ebo 9 ? ? v i e = 100a collector cutoff current i cev ? ? 10 a v ce ... |
| Description |
450V NPN HIGH VOLTAGE POWER TRANSISTOR
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| File Size |
309.33K /
5 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FK14KM-9
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| OCR Text |
...ditions ID = 1mA, VGS = 0V IG = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 450V, VGS = 0V ID = 1mA, VDS = 10V ID = 7A, VGS = 10V ID = 7A, VGS = 10V ID = 7A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 450 30 -- -- 2 -- -- 4.5 -- --... |
| Description |
HIGH-SPEED SWITCHING USE
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| File Size |
53.39K /
5 Page |
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it Online |
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Microsemi
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| Part No. |
APTGLQ200HR120G
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| OCR Text |
..., q4): v ces = 600v ; i c = 100a @ tc = 80c application ? uninterruptible power supplies features ? q1, q2 (high speed trench & field stop igbt4) ? q3, q4 (trench & field stop igbt3) - low voltage drop - low tail cu... |
| Description |
Three Level T-type Inverter
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| File Size |
491.33K /
10 Page |
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it Online |
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Microsemi
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| Part No. |
APTGLQ100A120T3AG
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| OCR Text |
... module v ces = 1200v i c = 100a @ tc = 100c downloaded from: http:///
aptglq100a120t3ag aptglq100a120t3ag C rev 1 december, 2014 www.microsemi.com 2-6 electrical characteristics (per igbt) symbol characteristic test ... |
| Description |
Phase Leg
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| File Size |
508.60K /
6 Page |
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it Online |
Download Datasheet |
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
FK14KM-9
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| OCR Text |
...ditions ID = 1mA, VGS = 0V IG = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 450V, VGS = 0V ID = 1mA, VDS = 10V ID = 7A, VGS = 10V ID = 7A, VGS = 10V ID = 7A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 450 30 -- -- 2 -- -- 4.5 -- --... |
| Description |
HIGH-SPEED SWITCHING USE
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| File Size |
59.21K /
5 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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