| |
|
 |
IRF[International Rectifier]
|
| Part No. |
IRHE8110 IRHE7110
|
| OCR Text |
... 100V 100V RDS(on) 0.60 0.60 ID 3.5A 3.5A
Features:
n n n n n n n n n n n n n
Radiation Hardened up to 1 x 106 Rads (Si) Single Event...2A VGS = 12V, ID = 3.5A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 2.2A VDS= 0.8 x Max Rating,VGS=0V ... |
| Description |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
|
| File Size |
314.98K /
12 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Maixm
|
| Part No. |
MAX3781 2234
|
| OCR Text |
...1 mux. Operating from a single +3.3V supply, this device accepts CML or AC-coupled PECL inputs and provides CML outputs. The outputs can be ...2A Positive Line Input 2A Negative Line Output 2A Negative Line Output 2A Positive Line Output 1A Ne... |
| Description |
2.75Gbps Dual Mux/Buffer
From old datasheet system
|
| File Size |
168.38K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
FAIRCHILD SEMICONDUCTOR CORP
|
| Part No. |
KSC5402DTF
|
| OCR Text |
...cuit 1 1.base 2.collector 3.emitter 1 d-pak to-220
?2001 fairchild semiconductor corporation rev. a2, august 2001 ksc5402d/ksc5402dt...2a t c =25 c 0.3 0.75 v t c =125 c0.651.2v v be (sat) base-emitter saturation voltage i c =0.4a, ... |
| Description |
2 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-252
|
| File Size |
181.74K /
12 Page |
View
it Online |
Download Datasheet |
| |
|
|
IRF[International Rectifier]
|
| Part No. |
IRHNJ67C30 IRHNJ63C30
|
| OCR Text |
... (Si) 2.9 300K Rads (Si) 2.9 ID 3.4A 3.4A
IRHNJ67C30 600V, N-CHANNEL
TECHNOLOGY
SMD-0.5
International Rectifier's R6TM technology pr...2A A VDS = VGS, ID = 1.0mA VDS = 15V, IDS = 2.2A A VDS = 480V ,VGS=0V VDS = 480V, VGS = 0V, TJ = 125... |
| Description |
RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)
|
| File Size |
186.69K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| Part No. |
FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 FSL9230R3 FN4084 FSL9230R4
|
| OCR Text |
...imited to IDM * Photo Current - 3.0nA Per-RAD(Si)/s Typically * Neutron - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2 - Usable to ...2A, VGS = -12V
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate ... |
| Description |
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3A 200V的电压，1.50欧姆，拉德硬，SEGR性，P通道功率MOSFET
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
3A/ -200V/ 1.50 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
| File Size |
45.44K /
8 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
