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International Rectifier, Corp.
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| Part No. |
IRF7342PBF
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| OCR Text |
... fast switching so-8 v dss = -55v r ds(on) = 0.105 ? irf7342pbf www.irf.com 1 parameter max. units v ds drain- source voltage -55 v i d @ t c = 25c continuous drain current, v gs @ 10v -3.4 i d @ t c = 70c continuous drain current, ... |
| Description |
HEXFETPower MOSFET (VDSS = -55V , RDS(on) = 0.105 ㈢的HEXFET功率MOSFET（减振钢板基本\u003d - 55V的，的RDS（on）\u003d 0.105ヘ）
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| File Size |
156.81K /
7 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
BUK954R2-55B NXPSEMICONDUCTORS-BUK954R2-55B127
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| OCR Text |
... voltage t j 25 c; t j 175c --55v i d drain current v gs =5v; t mb =25c; see figure 1 ; see figure 3 [1] --75a p tot total power dissipation t mb = 25 c; see figure 2 --300w static characteristics r dson drain-source on-state resist... |
| Description |
N-channel TrenchMOS logic level FET N沟道TrenchMOS逻辑电平场效应管
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| File Size |
175.40K /
14 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
BUK9230-55A
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| OCR Text |
... voltage t j 25 c; t j 175c --55v i d drain current v gs =5v; t mb =25c; see figure 1 ; see figure 3 --38a p tot total power dissipation t mb = 25 c; see figure 2 --88w static characteristics r dson drain-source on-state resistance ... |
| Description |
N-channel TrenchMOS logic level FET N沟道TrenchMOS逻辑电平场效应管
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| File Size |
172.00K /
14 Page |
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it Online |
Download Datasheet |
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Touchstone Semiconductor Inc
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| Part No. |
TS3005ITD1033TP
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| OCR Text |
...? supply voltage operation: 1.55v to 5.25v ? single resistor sets fout at 50% duty cycle ? 3 - pin user - programmable fout period: ? 1.7m s t fout 33 hrs ? fout period accuracy: 3 % ? fout period drift: 0.02 % /o... |
| Description |
A 1.55V to 5.25V, 1.35uA, 1.7ms to 33hrs Silicon Timer
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| File Size |
771.52K /
11 Page |
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it Online |
Download Datasheet |
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Touchstone Semiconductor Inc
Touchstone Semiconducto...
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| Part No. |
TS3004ITD1033TP
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| OCR Text |
...? supply voltage operation: 1.55v to 5.25v ? single resistor sets fout at 50% duty cycle ? 3 - pin user - programmable fout period: ? 3.3 s t fout 233 s ? fout period accuracy: 3 % ? fout period drift: 0.02 % /oc ... |
| Description |
A 1.55V to 5.25V, 1.9uA, 3.3us to 233s Silicon Timer
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| File Size |
786.17K /
11 Page |
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it Online |
Download Datasheet |
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Touchstone Semiconductor Inc
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| Part No. |
TS3003ITD1033T TS3003ITD1033TP
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| OCR Text |
...? supply voltage operation: 1.55v to 5.25v ? single resistor sets fout at 50% duty cycle ? programmable fout period: ? 10khz fout 300khz ? fout period accuracy: 3 % ? fout period drift: 0.02 % /oc ? single... |
| Description |
A 1.55V to 5.25V, 10kHz to 300kHz Silicon Timer
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| File Size |
824.59K /
10 Page |
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it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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| Part No. |
BUK75150-55A
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| OCR Text |
... voltage t j 25 c; t j 175c --55v i d drain current v gs =10v; t mb =25c; see figure 1 ; see figure 3 --11a p tot total power dissipation t mb = 25 c; see figure 2 --36w static characteristics r dson drain-source on-state resistance... |
| Description |
N-channel TrenchMOS standard level FET N沟道TrenchMOS标准电平场效应管
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| File Size |
172.65K /
13 Page |
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it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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| Part No. |
BUK7511-55A
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| OCR Text |
... voltage t j 25 c; t j 175c --55v i d drain current v gs =10v; t mb =25c; see figure 1 ; see figure 3 --75a p tot total power dissipation t mb = 25 c; see figure 2 --166w static characteristics r dson drain-source on-state resistanc... |
| Description |
N-channel TrenchMOS standard level FET N沟道TrenchMOS标准电平场效应管
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| File Size |
168.30K /
13 Page |
View
it Online |
Download Datasheet |
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