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  600v Datasheet PDF File

For 600v Found Datasheets File :: 16319    Search Time::1.016ms    
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    IDC08S60CE

Infineon Technologies AG
Part No. IDC08S60CE
OCR Text ... die size package idc08s60ce 600v 8a 1.658 x 1.52 mm 2 sawn on foil mechanical parameter raster size 1.658x 1.52 anode pad size 1.421 x 1.283 area total 2.52 mm 2 thickness 355 m wafer size 100 mm max. possible chi...
Description 2nd generation thinQ!TM SiC Schottky Diode

File Size 101.50K  /  4 Page

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    CM200DU-24H09

Mitsubishi Electric Semiconductor
Part No. CM200DU-24H09
OCR Text ... = 15V VCE = 10V VGE = 0V VCC = 600v, IC = 200A, VGE = 15V VCC = 600v, IC = 200A VGE = 15V RG = 1.6 Resistive load IE = 200A, VGE = 0V IE = 200A, die / dt = -400A / s Junction to case, IGBT part (Per 1/2 module) Junction to case, FWDi part ...
Description IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

File Size 76.45K  /  4 Page

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    CM200DU-24F09

Mitsubishi Electric Semiconductor
Part No. CM200DU-24F09
OCR Text ... = 15V VCE = 10V VGE = 0V VCC = 600v, IC = 200A, VGE = 15V VCC = 600v, IC = 200A VGE = 15V RG = 1.6, Inductive load IE = 200A IE = 200A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound applied*2 (1...
Description IGBT MODULES HIGH POWER SWITCHING USE

File Size 124.22K  /  4 Page

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    IKP20N60T IKP20N60T08

Infineon Technologies AG
Part No. IKP20N60T IKP20N60T08
OCR Text ...tp://www.infineon.com/igbt/ VCE 600v 600v IC 20A 20A VCE(sat),Tj=25C 1.5V 1.5V Tj,max 175C 175C Marking K20T60 K20T60 Package PG-TO-220-3-1 PG-TO-247-3 C G E PG-TO-247-3 * * * * * * * Type IKP20N60T IKW20N60T Maximum Rati...
Description Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology

File Size 448.94K  /  14 Page

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    CM150DY-24NF09

Mitsubishi Electric Semiconductor
Part No. CM150DY-24NF09
OCR Text ... = 15V VCE = 10V VGE = 0V VCC = 600v, IC = 150A, VGE = 15V VCC = 600v, IC = 150A VGE = 15V RG = 2.1, Inductive load IE = 150A IE = 150A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound Applied*2 (1...
Description IGBT MODULES HIGH POWER SWITCHING USE

File Size 86.99K  /  4 Page

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    CM100TL-24NF

Mitsubishi Electric Semiconductor
Part No. CM100TL-24NF
OCR Text ... = 15V VCE = 10V VGE = 0V VCC = 600v, IC = 100A, VGE = 15V VCC = 600v, IC = 100A VGE1 = VGE2 = 15V RG = 3.1, Inductive load switching operation IE = 100A IE = 100A, VGE = 0V IGBT part (1/6 module)*1 FWDi part (1/6 module)*1 Case to fin, The...
Description HIGH POWER SWITCHING USE

File Size 49.67K  /  5 Page

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    CM100TL-24NF09

Mitsubishi Electric Semiconductor
Part No. CM100TL-24NF09
OCR Text ... = 15V VCE = 10V VGE = 0V VCC = 600v, IC = 100A, VGE = 15V VCC = 600v, IC = 100A VGE = 15V RG = 3.1, Inductive load IE = 100A IE = 100A, VGE = 0V IGBT part (1/6 module)*1 FWDi part (1/6 module)*1 Case to heat sink, Thermal compound Applied ...
Description IGBT MODULES HIGH POWER SWITCHING USE

File Size 97.29K  /  5 Page

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    IPW60R070C6

Infineon Technologies AG
Part No. IPW60R070C6
OCR Text 600v CoolMOSTM C6 Power Transistor IPW60R070C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600v CoolMOSTM C6 Power Transistor IPW60R070C6 1 Description CoolMOSTM is a revolutionary technology for hig...
Description Metal Oxide Semiconductor Field Effect Transistor

File Size 1,563.38K  /  13 Page

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    CM100E3U-24H09 CM100E3U-24H

Mitsubishi Electric Semiconductor
Part No. CM100E3U-24H09 CM100E3U-24H
OCR Text ...K/W K/W V ns C K/W K/W VCC = 600v, IC = 100A, VGE = 15V VCC = 600v, IC = 100A VGE = 15V RG = 3.1 Resistive load IE = 100A, VGE = 0V IE = 100A die / dt = -200A / s Junction to case, IGBT part Thermal resistance (Note 5) Junction to case, ...
Description IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

File Size 71.76K  /  4 Page

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