|
|
|
ELPIDA MEMORY INC
|
Part No. |
EDE2104AASE-6E-E
|
OCR Text |
... they are packaged in 68-ball fbga package. features ? power supply: vdd, vddq = 1.8v 0.1v ? double-data-rate architecture: two data transfers per clock cycle ? bi-directional, differential data strobe (dqs and /dqs) is tra... |
Description |
512M X 4 DDR DRAM, PBGA68
|
File Size |
50.20K /
5 Page |
View
it Online |
Download Datasheet |
|
|
|
CYPRESS SEMICONDUCTOR CORP
|
Part No. |
MT58L64V36PF-5IT MT58L64V36PF-10IT MT58L64V36PF-6IT MT58L128V18PF-6IT
|
OCR Text |
... density, high speed 165-lead fbga low capacitive bus loading x18, x32 and x36 options available options marking timing (access/cycle/mhz) 3.5ns/5ns/200 mhz -5 3.5ns/6ns/166 mhz -6 4.0ns/7.5ns/133 mhz -7.5 5ns/10ns/100 mhz -10 con... |
Description |
64K X 36 STANDARD SRAM, 3.5 ns, PBGA165 64K X 36 STANDARD SRAM, 5 ns, PBGA165 128K X 18 STANDARD SRAM, 3.5 ns, PBGA165
|
File Size |
454.92K /
25 Page |
View
it Online |
Download Datasheet |
|
|
|
PROMOS TECHNOLOGIES INC
|
Part No. |
V54C365164VEI8PC V54C365164VEJ6
|
OCR Text |
fbga 4m x 16, 8m x 8, 16m x 4 v54c365(16/80/40)4ve rev. 1.4 march 2006 6 7pc 7 8pc system frequency (f ck ) 166 mhz 143 mhz 143 mhz 125 mhz clock cycle time (t ck3 ) 6 ns 7 ns 7 ns 8 ns clock access time (t ac3 ) cas latency = 3 5.4 ns 5... |
Description |
4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
|
File Size |
679.17K /
56 Page |
View
it Online |
Download Datasheet |
|
|
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
Part No. |
K4S56163PF K4S56163PF-F1L K4S56163PF-F90 K4S56163PF-RG K4S56163PF-RG_F90 K4S56163PF-RG_F1L K4S56163PF-RG_F75 K4S56163PF-RG/F90 K4S56163PF-RG/F1L K4S56163PF-RG/F75 K4S56163PF-RF750 K4S56163PF-BF900 K4S56163PF-RG750 K4S56163PF-BG750 K4S56163PF-RF900
|
OCR Text |
...Operation (-25C ~ 85C). 54Balls fbga ( -RXXX -Pb, -BXXX -Pb Free).
Mobile-SDRAM
GENERAL DESCRIPTION
The K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated wit... |
Description |
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 LEAD FREE, fbga-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, fbga-54 16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 fbga-54 4M x 16Bit x 4 Banks Mobile SDRAM in 54fbga 4米16 × 4银行4fbga移动SDRAM CAP 47UF 350V ELECT EB SMD
|
File Size |
111.59K /
12 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|