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				NXP Semiconductors
Part No.	AN10897
OCR Text	...ill flow radially, whereas the low frequency components will seek the path of least re sistance to ground. this current flow will excite any existing ant ennas (antennas are descr ibed later) in their path. the efficiency (gain) of thes...
Description	A guide to designing for ESD and EMC
File Size	215.94K / 30 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7811AV IRF7811AVTR
OCR Text	Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications S S S G 1 8 7 A A D D D D ...charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converte...
Description	Si, SMALL SIGNAL, FET, MS-012AA N-Channel Application-Specific MOSFETs
File Size	85.36K / 6 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7811A IRF7809A IRF7811ATR
OCR Text	...l for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications HEXFE...charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC conver...
Description	PROVISIONAL DATASHEET Chipset for DC-DC Converters 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
File Size	124.48K / 4 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840AL IRF840AS IRF840ASTRR
OCR Text	...x 0.85 ID 8.0A Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified (S...
Description	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 8A I(D) \| TO-263AB 晶体管\| MOSFET的\| N沟道\| 500V五（巴西）直\| 8A条（丁）\|63AB Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）最大值\u003d 0.85ohm，身份证\u003d 8.0A Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)
File Size	125.49K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF840A
OCR Text	... speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified (S...
Description	Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A) Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)
File Size	87.92K / 8 Page	View it Online	Download Datasheet

				Diodes Incorporated
Part No.	ZXMN3A02N8 ZXMN3A02N8TA ZXMN3A02N8TC ZXMN3A02N8-15
OCR Text	...e that combines the benefits of low on-resistance with fast switching speed. this makes them ideal for high efficiency, low voltage, power m...charge q g 14.5 nc v ds =15v,v gs =5v, i d =5.5a (refer to test circuit) total gate charge q g 26.8 ...
Description	30V N-CHANNEL ENHANCEMENT MODE MOSFET
File Size	174.97K / 7 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840LCL IRF840LCS
OCR Text	Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated D VDSS = 500V G S RDS(on) = 0.85 ID = 8.0A Description This new seri...
Description	Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）\u003d 0.85ohm，身份证\u003d 8.0A Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)
File Size	169.91K / 10 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	SI4864DY-T1-GE3
OCR Text	... power mosfets: 2.5 v rated ? low 3.5 m r ds(on) ? pwm (q gd and r g ) optimized applications ? low-side mosfet in synchronous buck...charge q g v ds = 10 v, v gs = 4.5 v, i d = 25 a 47 70 nc gate-source charge q gs 10 gate-drain...
Description	TRANSISTOR 17000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal
File Size	226.53K / 8 Page	View it Online	Download Datasheet

				Diodes Incorporated
Part No.	ZXMN3A01E6 ZXMN3A01E6TC ZXMN3A01E6TA
OCR Text	...e that combines the benefits of low on-resistance with fast switching speed. this makes them ideal for high efficiency, low voltage, power m...charge q g 2.3 nc v ds =15v,v gs =5v, i d =2.5a total gate charge q g 3.9 nc v ds =15v,v gs =10v, i ...
Description	30V N-CHANNEL ENHANCEMENT MODE MOSFET
File Size	220.15K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF9410
OCR Text	Low On-Resistance N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated S S S G 1 2 A A D D D D VDSS = 30V 3 6 4 5 RDS(on) = 0.030 T o p V ie w Recommended upgrade: IRF...
Description	Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)
File Size	103.18K / 7 Page	View it Online	Download Datasheet

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