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H7912AE V23990 024A145C 11000 BLV58 TKM50 DS26900N DDZX11C
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  n-ch Datasheet PDF File

For n-ch Found Datasheets File :: 20395    Search Time::1.969ms    
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    2SK3027

PANASONIC[Panasonic Semiconductor]
Part No. 2SK3027
OCR Text n-channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary brea...ch-c) Rth(ch-a) VDD = 30V, ID = 25A VGS = 10V, RL = 1.2 Conditions VDS = 50V, VGS = 0 VGS = 20V, VDS...
Description Silicon n-channel Power F-MOS FET

File Size 23.49K  /  1 Page

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    2SK3028 2SK3028TENTATIVE

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SK3028 2SK3028TENTATIVE
OCR Text n-channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary brea...ch-c) Rth(ch-a) VDD = 30V, ID = 50A VGS = 10V, RL = 0.6 Conditions VDS = 50V, VGS = 0 VGS = 20V, VDS...
Description Silicon n-channel Power F-MOS FET

File Size 24.42K  /  1 Page

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    2SK3029 2SK3022 2SK3029TENTATIVE PANASONICCORPORATION-2SK3029TENTATIVE

Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SK3029 2SK3022 2SK3029TENTATIVE PANASONICCORPORATION-2SK3029TENTATIVE
OCR Text n-channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary brea...ch-c) Rth(ch-a) VDD = 30V, ID = 3A VGS = 10V, RL = 10 Conditions VDS = 80V, VGS = 0 VGS = 20V, VDS =...
Description Silicon n-channel Power F-MOS FET 5000 mA, 100 V, n-chANNEL, Si, SMALL SIGNAL, MOSFET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset

File Size 23.26K  /  1 Page

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    2SK3299 2SK3299-S 2SK3299-ZJ D14060EJ1V0DS00 2SK3299-ZJ-E2 2SK3299-Z-E1 2SK3299-Z

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. 2SK3299 2SK3299-S 2SK3299-ZJ D14060EJ1V0DS00 2SK3299-ZJ-E2 2SK3299-Z-E1 2SK3299-Z
OCR Text n-chANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3299 is n-channel MOS FET device that features a low gate charge and excellent...CH-A) = 83.3 C/W 10 Rth(CH-C) = 1.67 C/W 1 0.1 0.01 10 100 1m 10m 100m ...
Description Switching n-channel power MOS FET industrial use N沟道 开关功率场效应晶体工业
From old datasheet system
n-ch Power MOS FET

File Size 76.83K  /  8 Page

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    2SK740

HITACHI[Hitachi Semiconductor]
Part No. 2SK740
OCR Text n-channel MOS FET Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current...ch-c (t) = S (t) * ch-c ch-c = 2.5C/W, TC = 25C PDM D = PW T PW T 1m 10 m Pulse Width PW (s) 100 m 1...
Description Silicon n-channel MOS FET

File Size 46.51K  /  8 Page

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    LM311 LM311N LM211D LM211 ON0303 LM311D

ONSEMI[ON Semiconductor]
Motorola, Inc
Motorola Inc
Part No. LM311 LM311N LM211D LM211 ON0303 LM311D
OCR Text ...y VCC 8 7 1 RL Output 8 1 N SUFFIX PLASTIC PACKAGE CASE 626 + Inputs 3 8 1 - D SUFFIX PLASTIC PACKAGE CASE 751 (SO-8...Ch ii Input Offset Voltage (Note 3) RS 50 k, TA = +25C RS 50 k, Tlow TA Thigh* Input Offset Curr...
Description    HIGH PERFORMANCE VOLTAGE COMPARATORS
From old datasheet system

File Size 172.81K  /  8 Page

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