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  ruggedness Datasheet PDF File

For ruggedness Found Datasheets File :: 7606    Search Time::3.516ms    
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    ARF44603

Advanced Power Technology
Part No. ARF44603
OCR Text ...ery high breakdown for improved ruggedness. low thermal resistance. nitride passivated die for improved reliability. to-247 arf446 arf447 g d s common source caution: these devices are sensitive to electrostatic discharge. proper handling ...
Description N-CHANNEL ENHANCEMENT MODE

File Size 402.33K  /  4 Page

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    PHB100N03LT NXPSEMICONDUCTORS-PHB100N03LT

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. PHB100N03LT NXPSEMICONDUCTORS-PHB100N03LT
OCR Text ...w on-state resistance Avalanche ruggedness rated Logic level compatible Surface mount package. 3. Applications c c s DC to DC converters s Synchronous rectification. 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT404, ...
Description N-channel enhancement mode field-effect transistor 75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 133.79K  /  13 Page

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    MRFE6VS25N MRFE6VS25NR1

Freescale Semiconductor, Inc
Part No. MRFE6VS25N MRFE6VS25NR1
OCR Text ruggedness n--channel enhancement--mode lateral mosfet rf power transistor designed for both narrowband and broadband ism, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 mhz. this device is fabricated using f...
Description RF Power LDMOS Transistor

File Size 1,301.94K  /  24 Page

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    TQM7M9023

TriQuint Semiconductor
Part No. TQM7M9023
OCR Text ...ity, temperature stability and ruggedness. its rf performance meets the stringent linearity requirements for multi-mode operation. electrical specifications gsm850/900 dcs/pcs umts b1 umts b5 umts b8 units ty p ty p ty p ty p t...
Description 5.0x7.5mm Multimode Multiband Power Amplifier

File Size 393.81K  /  15 Page

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    RF MICRO DEVICES INC
Part No. RF3183TR13
OCR Text ...o oscillations output load vswr ruggedness no damage or permanent degradation to device load vswr=10:1, all phase angles. set v ramp where p out < rated p out into 50 ? load, then load switched to vswr=10:1 note: v ramp,max =2.2v, v r...
Description TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PBCC11

File Size 1,093.28K  /  20 Page

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    MRFE6VP61K25GSR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 SUCOFORM250--01 C3225JB2A105KT TC--12 TC--350 HANDWOUN

Freescale Semiconductor, Inc
Freescale Semiconductor...
Part No. MRFE6VP61K25GSR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 SUCOFORM250--01 C3225JB2A105KT TC--12 TC--350 HANDWOUND HMK432B7225KM--T MCGPR100V477M16X32--RH ATC100B102KT50XT ATC100B150JT500XT C4532X7R1H685K ATC100B471JT200XT
OCR Text ...rf power ldmos transistors high ruggedness n--channel enhancement--mode lateral mosfets these high ruggedness devices are designed for use in high vswr industrial (including laser and plasma exciters), broadcast (analog and digital), aerosp...
Description RF Power LDMOS Transistors High ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
   RF Power LDMOS Transistors High ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

File Size 855.06K  /  23 Page

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    AVAGO
Part No. ACPM-7357
OCR Text ...ity, temperature stability and ruggedness the module is housed in a cost e?ective, small and thin 4x5mm package. block diagram features dual-band pa (band1 and band8) small size (4x5mm) thin package (1.0mm typ) excellent li...
Description Power Amplifier Module

File Size 367.83K  /  19 Page

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    ACPM-7357-TR1 ACPM-7357-BLK

AVAGO TECHNOLOGIES LIMITED
AVAGO TECHNOLOGIES LIMI...
Part No. ACPM-7357-TR1 ACPM-7357-BLK
OCR Text ...ity, temperature stability and ruggedness the module is housed in a cost e?ective, small and thin 4x5mm package. block diagram features dual-band pa (band1 and band8) small size (4x5mm) thin package (1.0mm typ) excellent li...
Description UMTS Dual-Band 4x5mm Power Amplifier Module (Band1/Band8)
   UMTS Dual-Band 4x5mm Power Amplifier Module (Band1/Band8)

File Size 338.63K  /  19 Page

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