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Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
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| Part No. |
CT30VS-8
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| OCR Text |
...nsulated by thin silicon oxide. So please handle carefully not to suffer from electrostatic charge. Notice 3. The operation life should be endured 5,000 shots under the charge current (Ixe 180A : full luminescence condition) of main conden... |
| Description |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
|
| File Size |
26.40K /
2 Page |
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it Online |
Download Datasheet
|
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|
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
CT30VS-8
|
| OCR Text |
...nsulated by thin silicon oxide. So please handle carefully not to suffer from electrostatic charge. Notice 3. The operation life should be endured 5,000 shots under the charge current (Ixe 180A : full luminescence condition) of main conden... |
| Description |
STROBE FLASHER USE
|
| File Size |
23.66K /
2 Page |
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it Online |
Download Datasheet |
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|
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Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
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| Part No. |
CT30VM-8
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| OCR Text |
...nsulated by thin silicon oxide. So please handle carefully not to suffer from electrostatic charge. Notice 3. The operation life should be endured 5,000 shots under the charge current (Ixe 180A : full luminescence condition) of main conden... |
| Description |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
|
| File Size |
26.31K /
2 Page |
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it Online |
Download Datasheet |
| |
|
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
CT30VM-8
|
| OCR Text |
...nsulated by thin silicon oxide. So please handle carefully not to suffer from electrostatic charge. Notice 3. The operation life should be endured 5,000 shots under the charge current (Ixe 180A : full luminescence condition) of main conden... |
| Description |
STROBE FLASHER USE
|
| File Size |
23.56K /
2 Page |
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it Online |
Download Datasheet |
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|
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| Part No. |
CT30TM-8
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| OCR Text |
...nsulated by thin silicon oxide. So please handle carefully not to suffer from electrostatic charge. Notice 3. The operation life should be endured 5,000 shots under the charge current (Ixe 180A : full luminescence condition) of main conden... |
| Description |
128 x 64 pixel format, LED Backlight available 130 A, 400 V, N-CHANNEL IGBT, TO-220F
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
|
| File Size |
27.36K /
2 Page |
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it Online |
Download Datasheet |
| |
|
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
CT30TM-8
|
| OCR Text |
...nsulated by thin silicon oxide. So please handle carefully not to suffer from electrostatic charge. Notice 3. The operation life should be endured 5,000 shots under the charge current (Ixe 180A : full luminescence condition) of main conden... |
| Description |
128 x 64 pixel format, LED Backlight available 频闪闪光器使
STROBE FLASHER USE
|
| File Size |
24.58K /
2 Page |
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it Online |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
POWEREX[Powerex Power Semiconductors]
|
| Part No. |
CT25ASJ-8
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| OCR Text |
...nsulated by thin silicon oxide. So please handle carefully not to suffer from electrostatic charge. Notice 3. The operation life should be endured 5,000 shots under the charge current (Ixe 150A : full luminescence condition) of main conden... |
| Description |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
|
| File Size |
33.13K /
2 Page |
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it Online |
Download Datasheet |
| |
|
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
POWEREX[Powerex Power Semiconductors]
|
| Part No. |
CT25AS-8
|
| OCR Text |
...nsulated by thin silicon oxide. So please handle carefully not to suffer from electrostatic charge. Notice 3. The operation life should be endured 5,000 shots under the charge current (Ixe 150A : full luminescence condition) of main conden... |
| Description |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
|
| File Size |
31.47K /
2 Page |
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it Online |
Download Datasheet |
| |
|
|
Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
|
| Part No. |
CT20VSL-8
|
| OCR Text |
...nsulated by thin silicon oxide. So please handle carefully not to suffer from electrostatic charge. Notice 3. The operation life should be endured 5,000 shots under the charge current (Ixe 130A : full luminescence condition) of main conden... |
| Description |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
|
| File Size |
25.72K /
2 Page |
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it Online |
Download Datasheet |
| |
|
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
CT20VSL-8
|
| OCR Text |
...nsulated by thin silicon oxide. So please handle carefully not to suffer from electrostatic charge. Notice 3. The operation life should be endured 5,000 shots under the charge current (Ixe 130A : full luminescence condition) of main conden... |
| Description |
STROBE FLASHER USE
|
| File Size |
23.07K /
2 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
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