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  to-220 Datasheet PDF File

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    IRF1010N

IRF[International Rectifier]
Part No. IRF1010N
OCR Text ... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...220 package is universally preferred for all commercial-industrial applications at power dissipation...
Description Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)

File Size 154.40K  /  8 Page

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    IRF1104

IRF[International Rectifier]
Part No. IRF1104
OCR Text ... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...220 package is universally preferred for all commercial-industrial applications at power dissipation...
Description Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A??
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?

File Size 97.26K  /  8 Page

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    IRF1310N

IRF[International Rectifier]
Part No. IRF1310N
OCR Text ... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...220 package is universally preferred for all commercial-industrial applications at power dissipation...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A)
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 92.91K  /  8 Page

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    IRF1310S

IRF[International Rectifier]
Part No. IRF1310S
OCR Text ... advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switchin...220 is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the...
Description Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)

File Size 319.11K  /  8 Page

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    IRF1404

International Rectifier
Part No. IRF1404
OCR Text ... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...220 package is universally preferred for all commercial-industrial applications at power dissipation...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?)
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A)
Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=162A)

File Size 105.33K  /  8 Page

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    IRF2804S-7P

IRF[International Rectifier]
Part No. IRF2804S-7P
OCR Text ...Repetitive Avalanche Allowed up to Tjmax VDSS = 40V G S RDS(on) = 1.6m ID = 160A Description Specifically designed for Automotive...220 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.028 1.2 --- --...
Description AUTOMOTIVE MOSFET

File Size 260.32K  /  10 Page

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    IRF2804 IRF2804L IRF2804S

IRF[International Rectifier]
Part No. IRF2804 IRF2804L IRF2804S
OCR Text ...Repetitive Avalanche Allowed up to Tjmax VDSS = 40V RDS(on) = 2.0m G S Description Specifically designed for Automotive applicatio...220 Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs IDSS IGSS Qg Qgs Qgd td(...
Description 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package
40V Single N-Channel HEXFET Power MOSFET in a to-220AB package

File Size 273.77K  /  12 Page

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    IRF2807

International Rectifier
Part No. IRF2807
OCR Text ... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...220 package is universally preferred for all commercial-industrial applications at power dissipation...
Description Power MOSFET(Vdss=75V, Id=82A?)
Power MOSFET(Vdss=75V, Id=82A)

File Size 149.88K  /  8 Page

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    IRF3205 IRF3205PBF

IRF[International Rectifier]
Part No. IRF3205 IRF3205PBF
OCR Text ... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...220 package is universally preferred for all commercial-industrial applications at power dissipation...
Description 55V Single N-Channel HEXFET Power MOSFET in a to-220AB package
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?)
Power MOSFET(Vdss=55V/ Rds(on)=8.0mohm/ Id=110A)

File Size 91.40K  /  8 Page

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    IRF3315

International Rectifier
Part No. IRF3315
OCR Text ... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...220 package is universally preferred for all commercial-industrial applications at power dissipation...
Description Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)

File Size 121.12K  /  8 Page

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