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  we-dd Datasheet PDF File

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    W24256 W24256-70 W24256-70L W24256-70LL W24256Q-70L W24256S-70L W24256Q-70LL W24256S-70LL

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WINBOND[Winbond]
Winbond Electronics, Corp.
Part No. W24256 W24256-70 W24256-70L W24256-70LL W24256Q-70L W24256S-70L W24256Q-70LL W24256S-70LL
OCR Text ... 22 21 20 19 18 17 16 15 VDD WE A13 A8 A9 A11 OE A10 CS I/O8 I/O7 I/O6 I/O5 I/O4 A3 A4 A5 A6 A7 A13 I/O1 I/O8 CORE CELL ARRAY 512 R...DD TCDR VDR > 2V = 0.9 V DD TR CS VIH CS > V DD - 0.2V = VIH ORDERING INFORMATI...
Description    32K X 8 CMOS STATIC RAM
From old datasheet system
BOX 3.05X1.51X1.05 W/2 BTNS GRY 32K X 8 STANDARD SRAM, 70 ns, PDSO28
32K X 8 CMOS STATIC RAM 32K X 8 STANDARD SRAM, 70 ns, PDSO28

File Size 145.88K  /  10 Page

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    K7M161835B

Samsung semiconductor
Part No. K7M161835B
OCR Text ...mory are trademarks of samsung. we bw x clk cke cs 1 cs 2 cs 2 adv oe zz dqa 0 ~ dqd 7 or dqa 0 ~ dqb 8 address address register contro...dd v dd v ss dqd 0 dqd 1 v ddq v ssq dqd 2 dqd 3 dqd 4 dqd 5 v ssq v ddq dqd 6 dqd 7 nc/dqpd 80 79 7...
Description 512Kx36 & 1Mx18 Flow-Through NtRAM

File Size 427.64K  /  19 Page

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    K7M161825M

Samsung semiconductor
Part No. K7M161825M
OCR Text ...adv to a - h4 ; from nc to we - m4 ; from we to cke 1. final spec release. add access time 7.5ns bin. 1. remove -10 bin ( tcd=1...dd v dd v ss dqd 0 dqd 1 v ddq v ssq dqd 2 dqd 3 dqd 4 dqd 5 v ssq v ddq dqd 6 dqd 7 dqpd 80 79 78 7...
Description (K7M161825M / K7M163625M) 512Kx36 & 1Mx18 Flow-Through NtRAM-TM

File Size 293.83K  /  20 Page

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    HYNIX SEMICONDUCTOR INC
Part No. HYMP512U64CP8-S6
OCR Text ...s selected by s 1 ras , cas , we sstl active low /ras,/cas and /we(along with s) define the command being entered. odt[1:0] sstl active hi...dd pins. ba[2:0] sstl - selects which ddr2 sdram internal bank of four or eight is activated. a[9:0...
Description 128M X 64 DDR DRAM MODULE, 0.4 ns, ZMA240

File Size 571.57K  /  30 Page

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    K7B323635C K7B323635C-PC750

Samsung semiconductor
Part No. K7B323635C K7B323635C-PC750
OCR Text ...r- formed by the combination of we x and bw when gw is high. and with cs 1 high, adsp is blocked to control signals. burst cycle can be...dd = 2.5 or 3.3v +/- 5% power supply. ? 5v tolerant inputs except i/o pins. ? byte writable func...
Description 1Mx36 & 2Mx18 Synchronous SRAM
1M X 36 CACHE SRAM, 7.5 ns, PQFP100

File Size 438.11K  /  20 Page

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    HMT451S6AFR8C

Hynix Semiconductor
Part No. HMT451S6AFR8C
OCR Text ... event temperature event pin 1 we write enable 1 test logic analyzer specific test pin (no connect on sodimm) 1 s [1:0] chip selects 2 ...dd core and i/o power 18 a10/ap address input/autoprecharge 1 v ss ground 52 a12/bc address in...
Description DDR3 SDRAM

File Size 1,056.16K  /  55 Page

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