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  2110 Datasheet PDF File

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INFINEON[Infineon Technologies AG]
Part No. PTF211802A PTF211802E PTF211802
OCR Text 2110-2170 MHz Description The PTF211802 is a 180 W, internally matched, laterally double-diffused, GOLDMOS push-pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and ...
Description LDMOS RF Power Field Effect Transistor 180 W 2110-2170 MHz
LDMOS RF POWER FIELD EFFECT TRANSISTOR 180 W, 2110-2170 MHZ
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz

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    AVAGO TECHNOLOGIES LIMI...
Part No. ACMD-6007
OCR Text ...db 30 30 42 30 s31 attenuation, 2110 C 2170 mhz db 30 30 34 30 s31 attenuation, 2400 C 2450 mhz db 30 30 57 30 s31 attenuation in transmit 2 nd harmonic band (5000 C 5140 mhz) db 20 20 39 20 s31 attenuation, 5150 C 5850 mhz db 20 20 35 ...
Description LTE Band 7 Duplexer

File Size 464.62K  /  14 Page

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    Taoglas antenna solutio...
Part No. DTAD01A50
OCR Text ...ed 1 ul: 1920 to 1980 dl: 2110 to 2170 ? 2 ul: 1850 to 1910 dl: 1930 to 1990 ? 3 ul: 1710 to 1785 dl: 1805 to 1880 ? 4 ul: 1710 to 1755 dl: 2110 to 2155 ? 5 ul: 824 to 849 dl: 869 to 894 ? 7 ul: 2...
Description Compact Evaluation Boards for Evolution DTA.01.A Digital Tunable Antenna

File Size 934.98K  /  25 Page

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    B7643

EPCOS
Part No. B7643
OCR Text ...0 Attenuation 1.0 1570.0 1805.0 2110.0 2402.0 3840.0 5760.0 ... ... ... ... ... ... ... 1570.0 1580.0 1880.0 2170.0 2480.0 3960.0 5940.0 MHz MHz MHz MHz MHz MHz MHz MHz MHz -- -- -- 0.2 1.8 1.6 -- 2.1 1.9 dB 10 20 1 38 5 13 ...
Description SAW Components

File Size 138.89K  /  11 Page

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    PTF210101M

Infineon Technologies AG
Part No. PTF210101M
OCR Text 2110 - 2170 MHz Description The PTF210101M is an unmatched 10-watt GOLDMOS (R) FET intended for class AB base station applications in the 2110 to 2170 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance...
Description High Power RF LDMOS Field Effect Transistor 10 W, 2110 ?2170 MHz

File Size 267.64K  /  8 Page

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    PTF210451E PTF210451F PTFA210451E

Infineon Technologies AG
Part No. PTF210451E PTF210451F PTFA210451E
OCR Text 2110 - 2170 MHz Description The PTF210451E and PTF210451F are 45-watt internally-matched GOLDMOS (R) FETs intended for TD-SCDMA applications from 2010 to 2025 MHz, and WCDMA applications from 2110 to 2170 MHz. Thermally-enhanced packaging...
Description Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 ?2025 MHz and 2110 ?2170 MHz

File Size 255.15K  /  10 Page

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    MRF6S20010N MRF6S20010NR1 MRF6S20010GNR1

Freescale Semiconductor, Inc
MOTOROLA
Part No. MRF6S20010N MRF6S20010NR1 MRF6S20010GNR1
OCR Text ...GNR1) Test Circuit Schematic -- 2110 - 2170 MHz Table 6. MRF6S20010NR1(GNR1) Test Circuit Component Designations and Values -- 2110 - 2170 MHz Part C1 C2, C6 C3, C7, C8 C4, C5, C9, C10 C11 R1 R2 R3 Description 100 nF Chip Capacitor (120...
Description RF Power Field Effect Transistors
The MRF6S20010NR1 and MRF6S20010GNR1 are designed for Class A or Class AB general purpose applications

File Size 572.02K  /  24 Page

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    Sirenza Microdevices, Inc.
Part No. XD010-35S
OCR Text ...age 1 Stage 2 XD010-35S-D2F 2110-2170 MHz Class A/AB 10W Power Amplifier Module Product Features Temperature Compensation Temperature Compensation * * * * * * * 5 50 W RF impedance 10W Output P1dB Single Voltage Operatio...
Description High Power Amplifiers

File Size 201.34K  /  4 Page

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    PTF211301 PTF211301A

Infineon Technologies AG
Part No. PTF211301 PTF211301A
OCR Text 2110-2170 MHz Description The PTF211301 is a 130-W, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Full gold metallization ensures ex...
Description LDMOS RF POWER FIELD EFFECT TRANSISTOR 130 W, 2110-2170 MHZ
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz

File Size 444.92K  /  9 Page

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