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ST Microelectronics
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Part No. |
BYV255V-200
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OCR Text |
...3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 50 100 150 200 250 300 350 400 450 500 p=100w p=70w p=40w p=20w t i m =tp/t tp i m(a) fig.2 : peak current versus form factor. tj=125 c o ifm(a) 1 10 100 1000 vfm(v) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 fi... |
Description |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
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File Size |
232.07K /
5 Page |
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NXP Semiconductors N.V.
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Part No. |
BLF7G15LS-200
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OCR Text |
...ier w-cdma 1476 to 1511 1600 28 50 19.5 29 ? 35 [1]
blf7g15ls-200 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 3 ? 22 july 2011 2 of 11 nxp semic... |
Description |
Power LDMOS transistor
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File Size |
95.74K /
11 Page |
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it Online |
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STMicro
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Part No. |
BYW98-200 3390
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OCR Text |
...
3.5
=tp/T
tp
Tamb(C) 50 75 100 125 150
3.0
0.0
0
25
Fig. 3: Thermal resistance versus lead length.
Fig. 4: Vari...200
VFM(V) 0.10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
3/5
BYW98-200
Fig. 7: Reve... |
Description |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES From old datasheet system
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File Size |
50.39K /
5 Page |
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it Online |
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STMicro
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Part No. |
SMBYW02-200
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OCR Text |
...=10ms sinusoidal Value 200 10 2 50 - 65 to + 150 150 Unit V A A A C C
July 1999 - Ed: 4C
1/5
SMBYW02-200
THERMAL RESISTANCE Symbol Rth (j-l) Junction to leads Parameter Value 25 Unit C/W
STATIC ELECTRICAL CHARACTERISTICS Symbol... |
Description |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
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File Size |
68.28K /
5 Page |
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it Online |
Download Datasheet |
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Price and Availability
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