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  90a Datasheet PDF File

For 90a Found Datasheets File :: 1362    Search Time::1.969ms    
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    FAIRCHILD[Fairchild Semiconductor]
Part No. FQH90N10V2
OCR Text ...haracteristics VDD = 100V, ID = 90a RG = 25 (Note 4, 5) ------(Note 4, 5) VDS = 80V, ID = 90a VGS = 10V ------ Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum...
Description 100V N-Channel MOSFET

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    H12

Crydom Inc.,
Part No. H12
OCR Text ...ion control voltage 25a 50a 75a 90a 125a (6) 4-32 vdc h12d4825 h12d4850 h12d4875 h12d4890 h12d48125 available options output specifications (1) description 25a 50a 75a 90a 125a (6) operating voltage (47-63hz) [vrms] 48-530 48-530 48-530 48...
Description H12 Series

File Size 784.48K  /  5 Page

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    BUK6C2R1-55C

NXP Semiconductors
Part No. BUK6C2R1-55C
OCR Text ...ate resistance v gs =10v; i d =90a; t j =25c; see figure 11 -1.92.3m ? buk6c2r1-55c all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 3 ? 18 january...
Description N-channel TrenchMOS intermediate level FET

File Size 163.24K  /  13 Page

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    APT45GP120JDF2

Advanced Power Technology
Part No. APT45GP120JDF2
OCR Text ...test <0.5 % duty cycle i c = 90a i c = 22.5a i c = 45a t c =125c t c =25c v ge = 10v. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle i c = 22.5a i c = 45a i c = 90a 050-743...
Description MOSFET

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    APT45GP120B2DF2

Advanced Power Technology
Part No. APT45GP120B2DF2
OCR Text ... i c = 22.5a i c = 45a i c = 90a i c = 90a i c = 22.5a 90 80 70 60 50 40 30 20 10 0 160 140 120 100 80 60 40 20 0 5 4 3 2 1 0 1.2 1.15 1.10 1.05 1.0 0.95 0.9 0.85 0.8 90 80 70 60 50 40 30 20 10 0 16 14 12 10 8 6 4 2 0 5 4.5 4 3.5 3 2...
Description MOSFET

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    FQP90N10V2 FQPF90N10V2

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Part No. FQP90N10V2 FQPF90N10V2
OCR Text ...temperature 2. L = 0.3mH, IAS = 90a, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 90a, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (...
Description 100V N-Channel Advanced QFET V2 series
100V N-Channel MOSFET 90 A, 100 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 918.56K  /  10 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FQH90N15 FQA90N15
OCR Text 90a, 150V, RDS(on) = 0.018 @VGS = 10 V * Low gate charge (typical 220 nC) * Low Crss (typical 200 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability * 175C maximum junction temperature rating (R) Description The...
Description From old datasheet system
N-Channel Power MOSFET

File Size 675.91K  /  9 Page

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    GALAXY[Galaxy Power, Inc.]
Part No. GPLW5V060STRT003 GPLC2V5100MTRT001 GPLC2V5100MTRT002 GPLC2V5100MTRT003 GPLC2V5100STRT001 GPLC2V5100STRT002 GPLC2V5100STRT003 GPLC3V390MTRT001 GPLC3V390MTRT002 GPLC3V390MTRT003 GPLC3V390STRT001 GPLC3V390STRT002 GPLC3V390STRT003 GPLC5V060MTRT001 GPLC5V060MTRT002 GPLC5V060MTRT003 GPLC5V060STRT001 GPLC5V060STRT002 GPLC5V060STRT003 GPLW2V5100MTRT001 GPLW2V5100MTRT002 GPLW2V5100MTRT003 GPLW2V5100STRT001 GPLW2V5100STRT002 GPLW2V5100STRT003 GPLW3V390MTRT001 GPLW3V390MTRT002 GPLW3V390MTRT003 GPLW3V390STRT001 GPLW3V390STRT002 GPLW3V390STRT003 GPLW5V060 GPLW5V060MTRT001 GPLW5V060MTRT002 GPLW5V060MTRT003 GPLW5V060STRT001 GPLW5V060STRT002
OCR Text 90a, 2.5V 100A, 1.8V 120A, 1.5V 120A, 1.2V 120A standard with extra wide trim range LEO Series The Leo is a 3/4 brick CoolConverterTM in the Galaxy family of high-efficiency DC/DC converters. Typical Efficiency: 91% at 1.8V, 60A; 88%...
Description LEO Series Industry’s Highest Current DC/DC Converter. 48V or 24V Input, 250W, 120A Output, 3.3V 90a, 2.5V 100A, 1.8V 120A, 1.5V 120A, 1.2V 120A stan

File Size 840.81K  /  8 Page

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    NXP Semiconductors N.V.
Part No. BUK6C1R5-40C
OCR Text ...tate resistance v gs =10v; i d =90a; t j =25c; see figure 11 - 1.15 1.4 m ? buk6c1r5-40c all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. objective data sheet rev. 1 ? 5 au...
Description N-channel TrenchMOS intermediate level FET 319 A, 40 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 183.27K  /  13 Page

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For 90a Found Datasheets File :: 1362    Search Time::1.969ms    
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