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  id-38a Datasheet PDF File

For id-38a Found Datasheets File :: 3569    Search Time::1.641ms    
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    AOSMD[Alpha & Omega Semiconductors]
Part No. AON5802
OCR Text ...cal. Features VDS (V) = 30V ID = 8 A (VGS = 10V) RDS(ON) < 17 m (VGS = 10V) RDS(ON) < 20 m (VGS = 4.5V) RDS(ON) < 22 m (VGS = 4.0V) RDS(ON) < 24 m (VGS = 3.1V) RDS(ON) < 30 m (VGS = 2.5V) ESD Rating: 2000V HBM S2 G2 D S1 Top Vi...
Description Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 187.34K  /  4 Page

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    TS820 TN805 TYN1008 TN80510 TYN608 TYN808 TN815 TN805-600H

STMicroelectronics
Part No. TS820 TN805 TYN1008 TN80510 TYN608 TYN808 TN815 TN805-600H
OCR Text ...TO-220AB January 2010 Doc ID 7476 Rev 6 1/12 www.st.com 12 Characteristics TN805, TN815, TS820, TYN608, TYN808, TYN1008 ...3 ms tp = 10 ms tp = 10 ms F = 60 Hz tp = 20 s Tc = 110 C Tc = 110 C 73 Tj = 25 C Tj = 25 C Tj = ...
Description 8 A, 600 V, SCR
Sensitive and standard 8 A SCRs

File Size 127.76K  /  12 Page

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    AOSMD[Alpha & Omega Semiconductors]
Part No. AON4602L AON4602
OCR Text ...atures n-channel VDS (V) = 20V ID = 4.2A p-channel -20V -3.4A (VGS= 4.5V) (VGS = 4.5V) (VGS = 2.5V) (VGS = 1.8V) D2 RDS(ON)< 50m < 90m RDS(ON) < 63m < 120m RDS(ON) < 87m < 160m D1 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D...
Description Complementary Enhancement Mode Field Effect Transistor

File Size 151.18K  /  7 Page

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    IRFU3707 IRFR3707 IRFR3707PBF IRFR3707TRR IRFU3707PBF

IRF[International Rectifier]
Part No. IRFU3707 IRFR3707 IRFR3707PBF IRFR3707TRR IRFU3707PBF
OCR Text ...DSS 30V RDS(on) max 13m ID 61A High Frequency Buck Converters for Computer Processor Power Benefits l l l Ultra-Low RDS(o...3.0 V VDS = VGS, ID = 250A 20 VDS = 24V, VGS = 0V A 100 VDS = 24V, VGS = 0V, TJ = 125C 200 VGS = 16V...
Description 30V Single N-Channel HEXFET Power MOSFET in a I-Pak package
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Power MOSFET(Vdss=30V, Rds(on)max=13mohm, Id=61A?)
Power MOSFET(Vdss=30V, Rds(on)max=13mohm, Id=61A)
Power MOSFET(Vdss=30V, Rds(on)max=13mohm, Id=61A?

File Size 134.17K  /  9 Page

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    IRFU3708 IRFR3708 IRFR3708TR IRFR3708TRL IRFR3708PBF IRFR3708TRR

IRF[International Rectifier]
Part No. IRFU3708 IRFR3708 IRFR3708TR IRFR3708TRL IRFR3708PBF IRFR3708TRR
OCR Text ...S 30V RDS(on) max 12.5m ID 61A l Benefits l l l Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized...3.7 2417 707 52 Max. Units Conditions --- S VDS = 15V, ID = 50A --- ID = 24.8A --- nC VDS = 15V --- ...
Description 30V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=61A?
Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=61A)
Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=61A?)
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package

File Size 127.77K  /  9 Page

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    STD1LNK60Z-1 STQ1NK60ZR-AP STQ1NK60ZR-AP07 STN1NK60Z

STMicroelectronics
Part No. STD1LNK60Z-1 STQ1NK60ZR-AP STQ1NK60ZR-AP07 STN1NK60Z
OCR Text ... 600V RDS(on) <15 <15 <15 ID 0.8A 0.3A 0.3A Pw 25W 3W 3.3W 2 TO-92 (Ammopak) 100% avalanche tested Extremely high dv/dt capability Gate charge minimized ESD improved capability New high voltage benchmark 1 2 3 2 1 ...
Description N-channel 600V - 13Ω - 0.8A - TO-92 - TO-251 - SOT-223 Zener-Protected SuperMESH Power MOSFET

File Size 436.25K  /  16 Page

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    FDD3510H

Fairchild Semiconductor
Part No. FDD3510H
OCR Text ...Max rDS(on) = 80m at VGS = 10V, ID = 4.3A Max rDS(on) = 88m at VGS = 6V, ID = 4.1A Q2: P-Channel Max rDS(on) = 190m at VGS = -10V, ID = -2.8...3) 37 TC = 25C TA = 25C Q1 80 20 13.9 4.3 20 35 3.1 1.3 54 mJ C -55 to +150 Q2 -80 20 -9.4 -2.8 -10 ...
Description Dual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80mOHM P-Channel: -80V, -9.4A, 190mOHM

File Size 424.11K  /  10 Page

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    DMS3017SSD-13 DMS3017SSD

Diodes Incorporated
Part No. DMS3017SSD-13 DMS3017SSD
OCR Text ...= 25C TA = 70C Symbol VDSS VGSS ID ID ID IDM Value 30 20 8.0 6.5 10 7.8 8.7 7.0 60 16 12.8 Unit V V A A A A A mJ Pulsed Drain Current (No...3 30.6 3.4 4.3 15.8 27.8 29.7 13.6 Max 100 100 2.5 12 15 0.60 2.7 - Unit V A nA V m S V Tes...
Description ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

File Size 196.81K  /  10 Page

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    AOSMD[Alpha & Omega Semiconductors]
Part No. AOF800L AO4F800
OCR Text ...2 VDS (V) = 30V VDS(V) = 30V ID = 8.3A (VGS = 10V) ID=17.7A RDS(ON) < 18m < 6.5m (VGS = 10V) < 8.5m (VGS = 4.5V) RDS(ON) < 27m D1 D1 G1 G2 S2 S2 S2 1 2 3 4 5 6 7 14 13 12 11 10 9 8 S1 S1 D2/S1 D2/S1 D2/S1 D2/S1 D2/S1 D1 ...
Description Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 135.64K  /  7 Page

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    CEM4435A10

Chino-Excel Technology
Part No. CEM4435A10
OCR Text ... otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -30 Units V V A A W C 20 -8 -50 2.5 -55 to 150 Maximum Power Dissipation Oper...3 20 33 Typ Max Units V A nA nA V m m S pF pF pF 5 VDS = -15V, VGS = 0V, f = 1.0 MHz Dr...
Description P-Channel Enhancement Mode Field Effect Transistor

File Size 389.44K  /  4 Page

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