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    IRF1010E

International Rectifier
Part No. IRF1010E
OCR Text ...mbol --- --- 84 showing the A G integral reverse --- --- 330 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 50A, VGS = 0V --- 73 110 ns TJ = 25C, IF = 50A --- 220 330 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is ...
Description Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

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    IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF

IRF[International Rectifier]
Part No. IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text ...mbol --- --- 85 showing the A G integral reverse --- --- 290 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 43A, VGS = 0V --- 69 100 ns TJ = 25C, IF = 43A --- 220 230 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is ...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?

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    IRF1010N

IRF[International Rectifier]
Part No. IRF1010N
OCR Text ...mbol --- --- 85 showing the A G integral reverse --- --- 290 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 43A, VGS = 0V --- 69 100 ns TJ = 25C, IF = 43A --- 220 230 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is ...
Description Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)

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    IRF1010Z IRF1010ZL IRF1010ZS

IRF[International Rectifier]
Part No. IRF1010Z IRF1010ZL IRF1010ZS
OCR Text ...ions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 75A, VGS = 0V TJ = 25C, IF = 75A, VDD = 25V di/dt = 100A/s e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET

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    IRF1104

IRF[International Rectifier]
Part No. IRF1104
OCR Text ...bol --- --- 100 showing the A G integral reverse --- --- 400 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 60A, VGS = 0V --- 74 110 ns TJ = 25C, IF = 60A --- 188 280 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is ...
Description Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A??
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?

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    IRF1302L IRF1302S

IRF[International Rectifier]
Part No. IRF1302L IRF1302S
OCR Text ...bol --- --- 174 showing the A G integral reverse --- --- 700 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 104A, VGS = 0V --- 66 100 ns TJ = 25C, IF = 104A --- 130 200 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on i...
Description Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?)
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A)
Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A)

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    IRF1302

IRF[International Rectifier]
Part No. IRF1302
OCR Text ...bol --- --- 180 showing the A G integral reverse --- --- 700 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 104A, VGS = 0V --- 66 100 ns TJ = 25C, IF = 104A --- 130 200 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is ...
Description Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?)
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A)
Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=180A)

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    IRF1310NL IRF1310NS

IRF[International Rectifier]
Part No. IRF1310NL IRF1310NS
OCR Text ...mbol --- --- 42 showing the A G integral reverse --- --- 140 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS =22A, VGS = 0V --- 180 270 ns TJ = 25C, IF = 22A --- 1.2 1.8 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is d...
Description Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

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    IRF1310N

IRF[International Rectifier]
Part No. IRF1310N
OCR Text ...mbol 42 --- --- showing the A G integral reverse --- --- 140 p-n junction diode. S --- --- 1.3 V TJ = 25C, IS = 22A, VGS = 0V --- 180 270 ns TJ = 25C, IF = 22A --- 1.2 1.8 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is ...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A)
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

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    IRF1310S

IRF[International Rectifier]
Part No. IRF1310S
OCR Text ...tions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 25A, VGS = 0V TJ = 25C, IF = 25A di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse w...
Description Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)

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