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Motorola Mobility Holdings, Inc.
Motorola, Inc
MOTOROLA[Motorola Inc]
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| Part No. |
MRF21125S MRF21125 MRF21125SR3
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| Description |
RF power FIELD EFFECT TRANSISTORS S BAND, Si, n-channel, RF power, MOSFET
MRF21125, MRF21125S, MRF21125SR3 2170 MHz, 125 W, 28 V Lateral n-channel RF power mosfets
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| File Size |
378.36K /
12 Page |
 View
it Online |
Download Datasheet
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT8020JFLL
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| Description |
40 A, 800 V, 0.22 ohm, n-channel, Si, power, MOSFET
power MOS 7TM is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets.
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| File Size |
256.97K /
5 Page |
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it Online |
Download Datasheet |
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Freescale (Motorola)
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF5S21100LSR3 MRF5S21100LR3 MRF5S21100L
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| Description |
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF power MOSFET
MRF5S21100L, MRF5S21100LR3, MRF5S21100LSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral n-channel RF power mosfets
The RF MOSFET Line RF power Field Effect n-channel Enhancement-Mode Lateral mosfets
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| File Size |
561.39K /
12 Page |
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it Online |
Download Datasheet |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
RFD16N03 RFD16N03LSM RFD16N03L FN4013
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| Description |
16A/ 30V/ 0.025 Ohm/ Logic Level/ n-channel power mosfets
16A, 30V, 0.025 Ohm, Logic Level,n-channel power mosfets(16A, 30V, 0.025 Ω, N沟道功率MOS场效应管) 16 A, 30 V, 0.025 ohm, n-channel, Si, power, MOSFET, TO-251AA
16A, 30V, 0.025 Ohm, Logic Level,n-channel power mosfets(16A, 30V, 0.025 Ω, N沟道功率MOS场效应管) 16 A, 30 V, 0.022 ohm, n-channel, Si, power, MOSFET, TO-252AA
16A, 30V, 0.025 Ohm, Logic Level, n-channel power mosfets
From old datasheet system
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| File Size |
106.52K /
8 Page |
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it Online |
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INTERSIL[Intersil Corporation]
Intersil, Corp.
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| Part No. |
FSS913A0R4 FSS913A0D FSS913A0D1 FSS913A0D3 FSS913A0R FSS913A0R1 FSS913A0R3 FSS913AOD
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| Description |
10A, -100V, 0.280 Ohm, Rad Hard, SEGR Resistant, P-Channel power mosfets
10A/ -100V/ 0.280 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel power mosfets
10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel power mosfets 10 A, 100 V, 0.28 ohm, P-CHANNEL, Si, power, MOSFET, TO-257AA
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| File Size |
55.89K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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