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				IRF[International Rectifier]
Part No.	IRF7807V
OCR Text	... A D D D D Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduction of conduction and switching losses makes it ideal for high effici...
Description	N Channel Application Specific MOSFET
File Size	126.34K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7807 IRF7807A IRF7807ATR IRF7807TR
OCR Text	... 3 6 Description These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency...
Description	8.3 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET Chip-Set for DC-DC Converters 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
File Size	238.61K / 8 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	SI7601DN-T1-GE3
OCR Text	new product document number: 73778 s-81549-rev. b, 07-jul-08 www.vishay.com 1 p-channel 20-v (d-s) mosfet features ? halogen-free option available ?trenchfet ? power mosfet ? low thermal resistance powerpak ? package with small size and...
Description	Trans MOSFET P-CH 20V 11.5A 8-Pin PowerPAK 1212 T/R
File Size	561.24K / 13 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840LCL IRF840LCS
OCR Text	... ID = 8.0A Description This new series of low charge HEXFET(R) power MOSFETs achieve significant lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS (low charge device MOSFETs) technology, the device improvements are a...
Description	Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）\u003d 0.85ohm，身份证\u003d 8.0A Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)
File Size	169.91K / 10 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K4H280838F-TC_LB3 K4H280438F K4H280438F-TC_LA0 K4H280438F-TC_LA2 K4H280438F-TC_LB0 K4H280838F-TC_LA2 K4H280838F-TC_LB0
OCR Text	...at all banks precharge state. A new command can be issued 2 clock cycles after EMRS or MRS. 3. Auto refresh functions are same as the CBR refresh of DRAM. The automatical precharge without row precharge command is meant by "Auto". Auto/self...
Description	128Mb F-die DDR SDRAM Specification
File Size	203.97K / 23 Page	View it Online	Download Datasheet

				SYNERGY MICROWAVE CORPORATION
Part No.	SC5100BD
OCR Text	...01 mclean boulevard paterson, new jersey 07504 tel: (973) 881-8800 fax: (973) 881-8361 e-mail: sales@synergymwave.com world wide web: http://www.synergymwave.com copyright ? synergy microwave corporation [ 2 of 3 ] 0 5 10 15 20 ...
Description	BI-DIRECTIONAL COUPLER
File Size	355.20K / 3 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K4H280838F-ULB3 K4H280438F-UC K4H280438F-UCA0 K4H280438F-UCA2 K4H280438F-UCB0 K4H280438F-ULA0 K4H280438F-ULA2 K4H280438F-ULB0 K4H280838F-UCA2 K4H280838F-UCB0 K4H280838F-UCB3 K4H280838F-ULA2 K4H280838F-ULB0
OCR Text	...at all banks precharge state. A new command can be issued 2 clock cycles after EMRS or MRS. 3. Auto refresh functions are same as the CBR refresh of DRAM. The automatical precharge without row precharge command is meant by "Auto". Auto/self...
Description	128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
File Size	295.20K / 23 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K4H510738E-TC_LB0 K4H510638E-TC_LA2 K4H510638E-TC_LAA K4H510638E-TC_LB0 K4H510738E K4H510738E-TC_LA2 K4H510738E-TC_LAA
OCR Text	...at all banks precharge state. A new command can be issued 2 clock cycles after EMRS or MRS. 3. Auto refresh functions are same as the CBR refresh of DRAM. The automatical precharge without row precharge command is meant by "Auto". Auto/self...
Description	Stacked 512Mb E-die DDR SDRAM Specification (x4/x8)
File Size	188.40K / 22 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
Part No.	K4H560838E-GCCC K4H560438E-GCC4 K4H560438E-GCCC K4H560838E-GCC4
OCR Text	...at all banks precharge state. A new command can be issued 2 clock cycles after EMRS or MRS. 3. Auto refresh functions are same as the CBR refresh of DRAM. The automatical precharge without row precharge command is meant by "Auto". Auto/self...
Description	DIODE ZENER SINGLE 300mW 27Vz 5mA-Izt 0.02503 0.05uA-Ir 21 SOT-23 3K/REEL 256Mb的电子芯片的DDR 400内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 29.8Vz 5mA-Izt 0.02503 0.05uA-Ir 23 SOT-23 3K/REEL 256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)
File Size	195.42K / 18 Page	View it Online	Download Datasheet

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