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    SI4484EY-T1

Vishay Siliconix
Part No. SI4484EY-T1
OCR Text ...e noted parameter symbol 10 s steady state unit drain-source voltage v ds 100 v gate-source voltage v gs 20 continuous drain current (t j = 175 c) a t a = 25 c i d 6.9 4.8 a t a = 85 c 5.4 3.7 pulsed drain current i dm 30 avalanc...
Description Trans MOSFET N-CH 100V 4.8A 8-Pin SOIC N T/R

File Size 243.09K  /  8 Page

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    Shenzhen Luguang Electronic Technology Co., Ltd
Shenzhen Luguang Electr...
Part No. 4180P4KE180 4180CP4KE180C
OCR Text ...e 1) p pk minimum 400 watts steady state power dissipation at t l =75 o c lead lengths .375?, 9.5mm (note 2) p d 1.0 watts peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load (jedec method) (note 3...
Description 400 Watts Transient Voltage Suppressor Diodes
   400 Watts Transient Voltage Suppressor Diodes

File Size 402.31K  /  4 Page

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    MPS
Part No. MP3412
OCR Text ... 100us/div. 40us/div. 20us/div. steady state (boost mode) v in =v en =0.8v, i led =80ma steady state (boost mode) v in =v en =1.8v, i led =200ma steady state (ldo mode) v in =v en =4.4v, i led =200ma enable shutdown v in =v en =1.8v, i led ...
Description 1MHz Synchronous Boost

File Size 352.36K  /  12 Page

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    NTR3A30PZT1G

ON Semiconductor
Part No. NTR3A30PZT1G
OCR Text ...(note 1) drain current (note 1) steady state t a = 25 c i d ? 2.9 a t a = 85 c ? 2.1 t 5 s t a = 25 c ? 4.7 power dissipation (note 1) steady state t a = 25 c p d 0.48 w t 5 s 1.25 pulsed drain current t p = 10 s i dm ? 8....
Description ?0 V, ?.9 A, Single P?Channel 2.4 x 2.9 x 1.0 mm SOT?3 Package

File Size 114.65K  /  6 Page

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    NTD4854N-35G

ON SEMICONDUCTOR
Part No. NTD4854N-35G
OCR Text ...us drain current r ja (note 1) steady state t a =25 c i d 20.8 a t a =85 c 16.1 power dissipation r ja (note 1) t a =25 c p d 2.5 w continuous drain current r ja (note 2) t a =25 c i d 15.7 a t a =85 c 12.2 power dissipation r ja (...
Description 15.7 A, 25 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 293.21K  /  8 Page

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    TY Semiconductor Co., Ltd
Part No. WNMD2165
OCR Text ... parameter symbol 10 s steady state unit drain - source vo ltage v ds 60 v gate - source voltage v gs 20 continuous drain current a d t a =25c i d 0.32 0.28 a t a =70c 0.25 0.22 maximum power ...
Description Dual N-Channel, 60V, 0.32A, Power MOSFET

File Size 1,878.49K  /  7 Page

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    TY Semiconductor Co., Ltd
Part No. WNMD2162 WNMD2162-8TR
OCR Text .... parameter symbol 10 s steady state unit drain - source voltage v ds 20 v gate - source voltage v gs 10 continuous drain current a.e t a =25c i d 4.8 4.8 a t a =70c 4.8 4.8 maximum power di...
Description Dual N-Channel, 20V, 4.8A, Power MOSFET

File Size 1,255.73K  /  7 Page

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    TY Semiconductor Co., Ltd
Part No. WNMD2162A WNMD2162A-8TR
OCR Text .... parameter symbol 10 s steady state unit drain - source voltage v ds 20 v gate - source voltage v gs 10 continuous drain current a.e t a =25c i d 4.8 4.5 a t a =70c 4.8 3.6 maximum power dissip...
Description Dual N-Channel, 20V, 4.8A, Power MOSFET

File Size 792.75K  /  7 Page

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