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CEL[California Eastern Labs]
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| Part No. |
UPC3218GV-e1-A UPC3217GV UPC3217GV-e1-A
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| OCR Text |
...c_IN 1
J3
Out1
7 8
R1 t1 R5 C1 R2 C2 R6 C7 C8 J2 C5 C6
R3 C3 C4 R4
t1 R7 R6 R4 R3 R1,R2,R5 C6, C8 U1
Transformer4:1 Coilcraft 0603 10K OHM RES ROHM 0603 13K OHM RES ROHM 0603 240 OHM RES ROHM 0603 191 OHM RES ROHM 0603 0 ... |
| Description |
5 V AGC AMPLIFIER VIDEO AMPLIFIER
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| File Size |
537.26K /
8 Page |
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it Online |
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CEL[California Eastern Labs]
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| Part No. |
UPC3219GV-e1-A
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| OCR Text |
...C at Cont.
5 6 7 8
C5 C6 R1 t1 R5 C1 R3 C3 R2 C2 C7 C8 J2 C4 R4 J1
Vcc
uPC3219GV
J3
Agc_IN1
Out1
R7 R4 R3 R6
t1
0603 10K OHM RES ROHM 0603 1K OHM RES ROHM 0603 0 OHM RES ROHM 0603 13K OHM RES ROHM
Transformer4... |
| Description |
5 V AGC AMPLIFIER VIDEO AMPLIFIER
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| File Size |
426.35K /
7 Page |
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it Online |
Download Datasheet |
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Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
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| Part No. |
SI8407DB-T2-e1 SI8407DB SI8407DB-T2
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| OCR Text |
...Duration (sec) 10-1
Notes: PDM t1
t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 72_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
t1 t2
10
100
600
www.vishay.com
4
Document Number: 72254 S-50066--Rev. B, 17-... |
| Description |
P-Channel 20-V (D-S) MOSFET, Low-Threshold
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| File Size |
66.86K /
6 Page |
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it Online |
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Renesas Electronics, Corp.
Renesas Electronics Corporation
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| Part No. |
NP40N10VDF-e1-AY NP40N10PDF-e1-AY NP40N10YDF-e1-AY NP40N10YDF-E2-AY NP40N10PDF-E2-AY NP40N10VDF-E2-AY
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| OCR Text |
...er dissipation (t c = 25 c) p t1 120 w np40n10ydf total power dissipation (t a = 25 c) ? 2 p t2 1.0 w np40n10vdf total power dissipation (t a = 25 c) ? 2 1.2 np40n10pdf total power dissipation (t a = 25 c) 1.8 ... |
| Description |
40 A, 100 V, 0.037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 LEAD FREE, MP-3ZP, 3 PIN
40 A, 100 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, TO-263, MP-25ZP, 3 PIN
MOS FIELD EFFECT TRANSISTOR
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| File Size |
248.35K /
11 Page |
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it Online |
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Renesas Electronics Corporation
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| Part No. |
NP30N06QDK-e1-AY NP30N06QDK-E2-AY
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| OCR Text |
...sipation (t c = 25 c) ? 4 p t1 59 w total power dissipation (t a = 25 c) ? 2, 4 p t2 1.0 w channel temperature t ch 175 c storage temperature t stg ? 55 to + 175 c repetitive avalanche current ? ? 3 e ar 35 m... |
| Description |
60 V ?30 A ?Dual N-channel Power MOS FET
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| File Size |
607.68K /
9 Page |
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it Online |
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Renesas Electronics Corporation
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| Part No. |
NP29N06QDK-e1-AY NP29N06QDK-E2-AY
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| OCR Text |
...sipation (t c = 25 c) ? 4 p t1 44 w total power dissipation (t a = 25 c) ? 2, 4 p t2 1.0 w channel temperature t ch 175 c storage temperature t stg ? 55 to + 175 c repetitive avalanche current ? ? 3 e ar 15 m... |
| Description |
60 V ?30 A ?Dual N-channel Power MOS FET
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| File Size |
609.03K /
9 Page |
View
it Online |
Download Datasheet |
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