1) High breakdown voltage, BVCEO=-80V, and high current, IC=-0.7A. 2) Complements the 2SD1767 / 2SD1859. !External dimensions (Units : mm)
...6.8 2.5
1 When mounted on a 40x40x0.7 mm ceramic board. 2 Printed circuit board 1.7 mm thick, col...
Description
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) Medium power transistor
1
s Features
q q q
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Co...6
- 0.4
- 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3
- 0.2
0 0 -1 -2 -3 -4 -5 -6
...
1 1.5 2.50.1 1.0
s Features
q q q
1.5 R0.9 R0.9
0.4
2.40.2 2.00.2 3.50.1
High collector to base voltage VCBO. High collector...6 -1.5 V V MHz pF typ max Unit V V V
1.250.05
s Absolute Maximum Ratings
(Ta=25C)
0.550....
1 2.50.1 1.0
1.0 2.40.2 2.00.2 3.50.1
s Features
q q
1.5
0.4
1.5 R0.9 R0.9
High foward current transfer ratio hFE. M type pac...6 -1.2 -1.8
Collector current IC (mA)
-160
Ta=75C 25C -25C
- 0.3 - 0.1 - 0.03 - 0.01
...
...tary to 2SD638 and 2SD639
6.90.1 1.5 2.50.1 1.0
1.0 2.40.2 2.00.2 3.50.1
Unit: mm
s Features
q
1.5 R0.9 R0.9
1.00.1
0.85
Parameter Collector to base voltage Collector to 2SB643 2SB644 2SB643
Symbol VCBO VCEO VEBO ICP...
Description
Silicon PNP epitaxial planer type(For low-power general amplification)