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				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3708 IRF3708L IRF3708S
OCR Text	... 25C, I F = 31A, VR=20V di/dt = 100A/s TJ = 125C, IF = 31A, VR=20V di/dt = 100A/s 2 www.irf.com IRF3708/3708S/3708L 1000 VGS TOP 10.0V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V 1000 VGS 10.0V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V B...
Description	Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) 功率MOSFET（减振钢板基本\u003d 30V的，的Rdson）最大值\u003d 12mohm，身份证\u003d 62A条） Power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62A)
File Size	137.00K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S
OCR Text	...= 25C, IF = 30A, VR=15V di/dt = 100A/s TJ = 125C, IF = 30A, VR=15V di/dt = 100A/s 2 www.irf.com IRF3709/3709S/3709L 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) VGS 15V 10V 7.0V 5.5V...
Description	Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A? Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET（减振钢板基本\u003d 30V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 90A型? Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A) Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A) Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?) Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??
File Size	120.60K / 11 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3710L IRF3710S
OCR Text	... IF = 28A --- 1.7 2.6 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; duty cycle 2%. ...
Description	Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.025ohm，身份证\u003d 57A条） Power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A) Power MOSFET(Vdss=100V Rds(on)=0.025ohm Id=57A)
File Size	180.61K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3710 IRF3710PBF
OCR Text	...F = 28A --- 670 1010 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) ISD 28A, di/dt 380A/s, VDD V(BR)DSS,...
Description	Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 23mohm，身份证\u003d 57A条） Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A) 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	92.57K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3711 IRF3711L IRF3711S
OCR Text	...= 25C, IF = 16A, VR=10V di/dt = 100A/s TJ = 125C, IF = 16A, VR=10V di/dt = 100A/s D S 2 www.irf.com IRF3711/3711S/3711L 1000 VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP 1000 I D , Drain-to-Source Current (A) ...
Description	Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?? Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A) Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?) Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A) Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?
File Size	243.87K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3717
OCR Text	...5C, IF = 16A, VDD = 10V di/dt = 100A/s e e 2 www.irf.com IRF3717 1000 TOP VGS 10V 4.5V 3.8V 3.5V 3.3V 3.0V 2.8V 2.5V 1000 TOP VGS 10V 4.5V 3.8V 3.5V 3.3V 3.0V 2.8V 2.5V ID, Drain-to-Source Current (A) 100 BOTTOM ...
Description	HEXFETPower MOSFET
File Size	246.14K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3805 IRF3805L IRF3805S
OCR Text	...5C, IF = 75A, VDD = 28V di/dt = 100A/s e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRF3805/S/L 1000 TOP 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V TOP VGS 15V 10V 8.0V 7...
Description	AUTOMOTIVE MOSFET
File Size	358.50K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF3808L IRF3808S RF3808S
OCR Text	...IF = 82A --- 340 510 nC di/dt = 100A/s T Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) U Coss eff. is a fixed capacitance that gives the same charging time V Calculated continuous current based on maximum allowable...
Description	75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package AUTOMOTIVE MOSFET Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A) Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET（减振钢板基本\u003d 75V的，的Rdson）\u003d 0.007ohm，身份证\u003d 106A章?
File Size	159.77K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3808 IRF3808PBF
OCR Text	...IF = 82A --- 340 510 nC di/dt = 100A/s T Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Q Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). R Starting TJ = 25C, L = 0.130mH RG = 25...
Description	75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?
File Size	129.31K / 9 Page	View it Online	Download Datasheet

				SEME-LAB[Seme LAB]
Part No.	IRF460
OCR Text	... IS = - ID [Cont.] , dls / dt = 100A/s IS = - ID [Cont.] , dls / dt = 100A/s Min. Typ. Max. Unit 21 A 84 1.8 580 8.1 V ns C THERMAL CHARACTERISTICS RJC RJA Characteristic Junction to Case Junction to Ambient 1) Repetitive Rating: Pulse ...
Description	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	16.77K / 2 Page	View it Online	Download Datasheet

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