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				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
Part No.	MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF0 MR16R1624AF0 MR16R1628AF0 MR16R1622AF0 MR16R1624AF0-CK8 MR16R1624AF0-CM8 MR18R1628AF0-CK8 MR18R1628AF0-CM8 MR18R1628AF1-CN9 MR18R1628AF1-CT9 MR18R1622AF0-CK8 MR18R1622AF0-CM8 MR18R162GAF0-CK8 MR18R162GAF0-CM8 MR18R162GAF0-CN9 MR18R162GAF0-CT9 MR18R1624AF0-CK8 MR18R1624AF0-CM8 MR18R1624AF1-CN9 MR18R1624AF1-CT9 MR16R1622AF0-CK8 MR16R1622AF0-CM8 MR16R162GAF0-CK8 MR16R162GAF0-CM8 MR16R1628AF0-CK8 MR16R1628AF0-CM8
OCR Text	... each 512/576MB, 256/288MB, 128/144mb, 64/72MB module respectively Gold plated edge connector pad contacts Serial Presence Detect(SPD) support Operates from a 2.5 volt supply (5%) Powerdown self refresh modes Separate Row and Column bu...
Description	64M X 16 RAMBUS MODULE, DMA184 TVS 500W 6.5V BIDIRECT DO-15 6Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V 16Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V (MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die (MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
File Size	417.13K / 16 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	PD44324185BF5-E33-FQ1-A PD44324185BF5-E40-FQ1-A PD44324365BF5-E33-FQ1-A
OCR Text	... 10a for 72mb : 10a and 2a for 144mb : 10a, 2a and 7a for 288mb 2a and 10a of this product can also be used as nc. pd44324185b, pd44324365b r10ds0037ej0200 rev.2.00 page 4 of 34 september 12, 2011 pin arrangement ...
Description	36M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION
File Size	415.47K / 35 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K7R320982C K7R323682C-FEC30 K7R321882C K7R323682C K7R323682C-FC20 K7R323682C-FC25 K7R323682C-FC30 K7R323682C-FCI20 K7R323682C-FCI25 K7R323682C-FCI30 K7R323682C-FEC20 K7R323682C-FEC25
OCR Text	...ress, i.e. 3A for 72Mb, 10A for 144mb and 2A for 288Mb. 2. BW0 controls write to D0:D8, BW1 controls write to D9:D17, BW2 controls write to D18:D26 and BW3 controls write to D27:D35. PIN NAME SYMBOL K, K C, C CQ, CQ Doff SA D0-35 PIN NU...
Description	1Mx36 & 2Mx18 & 4Mx9 QDR II b2 SRAM
File Size	455.05K / 20 Page	View it Online	Download Datasheet

				Integrated Silicon Solution, Inc
Part No.	IS61QDB42M18-200M3 IS61QDB41M36-200M3 IS61QDB41M36
OCR Text	...densities: A3 for 72Mb, 10A for 144mb, and 2A for 288Mb. x18 FBGA Pinout (Top View) 1 A B C D E F G H J K L M N P R CQ NC NC NC NC NC NC Doff NC NC NC NC NC NC TDO 2 VSS/SA* Q9 NC D11 NC Q12 D13 VREF NC NC Q15 NC D17 NC TCK 3 SA D9 D10 ...
Description	36 Mb (1M x 36 & 2M x 18) QUAD (Burst of 4) Synchronous SRAMs
File Size	450.34K / 28 Page	View it Online	Download Datasheet

				Integrated Silicon Solution, Inc
Part No.	IS61QDB22M18-250M3 IS61QDB22M18-250M3L IS61QDB22M18 IS61QDB21M36-250M3 IS61QDB21M36-250M3L
OCR Text	...densities: A3 for 64Mb, 10A for 144mb, and 2A for 288Mb. x18 FBGA Pinout (Top View) 1 A B C D E F G H J K L M N P R CQ NC NC NC NC NC NC Doff NC NC NC NC NC NC TDO 2 VSS/SA* Q9 NC D11 NC Q12 D13 VREF NC NC Q15 NC D17 NC TCK 3 SA D9 D10 ...
Description	36 Mb (1M x 36 & 2M x 18) QUAD (Burst of 2) Synchronous SRAMs
File Size	495.96K / 27 Page	View it Online	Download Datasheet

				Integrated Silicon Solution, Inc
Part No.	IS61DDB42M18-250M3 IS61DDB42M18 IS61DDB41M36-250M3
OCR Text	...ed for higher densities: 2A for 144mb, 10A for 72Mb. * BW0 controls writes to DQ0-DQ8; BW1 controls writes to DQ9-DQ17; BW2 controls writes to DQ18-DQ26; BW3 controls writes to DQ27-DQ35. x18 FBGA Pinout (Top View) 1 A B C D E F G H J K...
Description	36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs
File Size	514.32K / 26 Page	View it Online	Download Datasheet

				Integrated Silicon Solution, Inc
Part No.	IS61DDB22M18-250M3 IS61DDB22M18 IS61DDB21M36-250M3
OCR Text	...ed for higher densities: 2A for 144mb, 10A for 72Mb. * BW0 controls writes to DQ0-DQ8; BW1 controls writes to DQ9-DQ17; BW2 controls writes to DQ18-DQ26; BW3 controls writes to DQ27-DQ35. x18 FBGA Pinout (Top View) 1 A B C D E F G H J K...
Description	36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs
File Size	549.55K / 25 Page	View it Online	Download Datasheet

				GSI TECHNOLOGY
Part No.	GS81302R08E-200I GS81302R09E-200IT GS81302R09E-167I GS81302R09E-167IT
OCR Text	144mb sigmaddr tm -ii burst of 4 sram 333 mhz?167 mhz 1.8 v v dd 1.8 v and 1.5 v i/o 165-bump bga commercial temp industrial temp rev: 1.01a 6/2010 1/36 ? 2007, gsi technology specifications cited are subject to change without notice ....
Description	16M X 8 DDR SRAM, 0.45 ns, PBGA165 4M X 9 DDR SRAM, 0.45 ns, PBGA165 16M X 9 DDR SRAM, 0.5 ns, PBGA165 4M X 9 DDR SRAM, 0.5 ns, PBGA165
File Size	341.69K / 36 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K7S3218T4C K7S3236T4C K7S3236T4C-FECI45 K7S3236T4C-FECI33
OCR Text	...ess, i.e. 3a for 72mb, 10a for 144mb and 2a for 288m b. 2. bw 0 controls write to d0:d8, bw 1 controls write to d9:d17, bw 2 controls write to d18:d26 and bw 3 controls write to d27:d35. 1 2 3 4 5 6 7 8 9 10 11 a cq nc/...
Description	1Mx36 & 2Mx18 QDRTM II b4 SRAM 1Mx36 & 2Mx18 QDRTM II b4 SRAM 1Mx36
File Size	445.12K / 20 Page	View it Online	Download Datasheet

				Micron Technology, Inc.
Part No.	MT54V512H18A
OCR Text	... for 36mb, 10a for 72mb, 2a for 144mb 5 512k x 18 2.5v v dd , hstl, qdrb2 sram micron technology, inc., reserves the right to change products or specifications without notice. mt54v512h18a.p65 C rev. 3/00 ?2000, micron technology, inc. ad...
Description	512K x 18 Synchronous Pipelined Burst SRAM(9Mb，流水线式，同步脉冲静态存储器)
File Size	247.87K / 22 Page	View it Online	Download Datasheet

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