|
|
|
FAIRCHILD SEMICONDUCTOR CORP
|
Part No. |
FQB12N20LTM
|
OCR Text |
... 1/8 " from case for 5 seconds 300 c symbol parameter typ max units r jc thermal resistance, junction-to-case -- 1.39 c / w r ja thermal ...gd gate-drain charge -- 7.6 -- nc drain-source diode characteristics and maximum ratings i s maximum... |
Description |
11.6 A, 200 V, 0.32 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
|
File Size |
662.93K /
13 Page |
View
it Online |
Download Datasheet |
|
|
|
IRF[International Rectifier]
|
Part No. |
IRFZ48ZSPBF IRFZ48ZLPBF IRFZ48ZPBF
|
OCR Text |
...ing torque, 6-32 or M3 screw
300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Thermal Resistance
Parameter
RJC RCS RJA RJA Junction-to-Case...gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
12.0 ID= 37A
VGS, Gate-to-Source Voltage (V)
... |
Description |
AUTOMOTIVE MOSFET
|
File Size |
277.01K /
12 Page |
View
it Online |
Download Datasheet |
|
|
|
HARRIS SEMICONDUCTOR
|
Part No. |
IRFR9220
|
OCR Text |
... . . . . . . . . . . . . .t pkg 300 260 o c o c caution: stresses above those listed in absolute maximum ratings may cause permanent damage ...gd -11 - nc gate to source charge q gs - 3.3 - nc input capacitance c iss v ds = -25v, v gs = 0v, ... |
Description |
0.6 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
File Size |
88.35K /
7 Page |
View
it Online |
Download Datasheet |
|
|
|
Kersemi Electronic Co., Ltd.
|
Part No. |
IRF640
|
OCR Text |
...ns (p eak temperature) for 10 s 300 d mounting torque 6-32 or m3 screw 10 lbf in 1.1 n m www.kersemi.com
2 irf640, sihf640 notes a. r...gd --39 turn-on delay time t d(on) v dd = 100 v, i d = 18 a, r g = 9.1 , r d = 5.4 , see... |
Description |
Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching
|
File Size |
6,720.12K /
7 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|