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				Rohm Co., Ltd. ROHM[Rohm]
Part No.	BA6219B BA6219BFP-Y BA6219BFPY A5800938 BA6219B/BFP-Y
OCR Text	...he same time. CM : Capacitor to absorb surge voltage and prevent parasitic oscillations. FExternal dimensions (Units: mm) 404
Description	Reversible Motor Driver(可逆电机驱动器) 可逆电机驱动器（可逆电机驱动器 From old datasheet system Motor Drivers LSIs > DC motor driver > Reversible DC motor driver for one motor
File Size	106.61K / 7 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MBR1035 ON0408 MBR1045
OCR Text	...g also operates like a zener to absorb over-voltage transients. Second is the package. The Schottky chip is bonded to the copper heat sink using a specially formulated solder. This gives the unit the capability of passing 10,000 operating t...
Description	SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 20 to 45 VOLTS From old datasheet system
File Size	146.57K / 6 Page	View it Online	Download Datasheet

				Apex Microtechnology Corporation ETC
Part No.	PA08 PA08A
OCR Text	...he supply with a zener diode to absorb the transient. SAFE OPERATING AREA (SOA) The output stage of most power amplifiers has two distinct limitations: 1. The current handling capability of the transistor geometry and the wire bonds. 2....
Description	POWER OPERATIONAL AMPLIFIERS
File Size	59.30K / 4 Page	View it Online	Download Datasheet

				Semtech Corporation Semtech, Corp.
Part No.	SLVU2.8-4 SLVU2.8-4TB SLVU2.8-4TE SEMTECHCORPORATION-SLVU2.8-4TB
OCR Text	...e maintaining the capability to absorb high transient currents. The IV characteristic curve of the EPD device is shown in Figure 1. The device represents a high impedance to the circuit up to the working voltage (VRWM). During a transient e...
Description	EPD TVS Diode Array For ESD and Latch-UP Protection EPD TVS Diodes Array For ESD and Latch-Up Protection EPD TVSDiodes Array For ESD and Latch-Up Protection ⑩环保署二极管阵列二极管ESD和锁定保
File Size	192.01K / 8 Page	View it Online	Download Datasheet

				Semtech Corporation
Part No.	SLVU2.8 SLVU2.8TC SLVU2.8TG
OCR Text	...e maintaining the capability to absorb high transient currents. The IV characteristic curve of the EPD device is shown in Figure 1. The device represents a high impedance to the circuit up to the working voltage (VRWM). During a transient e...
Description	Low Voltage EPD TVS Diode for ESD and Latch-UP Protection Low Voltage EPD TVS Diodes For ESD and Latch-Up Protection Low Voltage EPD TVSDiodes For ESD and Latch-Up Protection XTAL MTL SMT HC49/USM
File Size	206.49K / 8 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. ST Microelectronics 意法半导 STMICROELECTRONICS[STMicroelectronics]
Part No.	STB7NC70Z STB7NC70Z-1 STP7NC70ZFP STP7NC70Z STB7NC70ZT4 STBB7NC70Z
OCR Text	...y, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the ...
Description	N-CHANNEL 700V - 1.1ohm - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET N沟道高达700V - 1.1ohm - 6ATO-220/FP/D2PAK/I2PAK齐保护的PowerMESH⑩三MOSFET N-CHANNEL MOSFET N-CHANNEL 700V - 1.1 OHM - 6A TO-220/FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOSFET N-CHANNEL 700V - 1.1ohm - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESHIII MOSFET N-CHANNEL 700V - 1.1ohm - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?III MOSFET
File Size	527.59K / 13 Page	View it Online	Download Datasheet

				ST Microelectronics 意法半导 STMICROELECTRONICS[STMicroelectronics]
Part No.	STB7NC80Z STB7NC80Z-1 STP7NC80ZFP STP7NC80Z STBB7NC80Z
OCR Text	...y, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the...
Description	6.5 A, 800 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB N-CHANNEL MOSFET New Generation Twisted Paired Multiconductor Audio Cable; Number of Conductors:4; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Material:Polyvinylchloride (PVC); Shielding Material:Aluminum Foil/Polyester Tape N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET N-CHANNEL 800V - 1.3 OHM - 6.5A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOSFET N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESHIII MOSFET N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?III MOSFET
File Size	540.50K / 13 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semi
Part No.	MMFT2955E MMFT2955E_D ON2219 ON2218 MMFT2955ET1
OCR Text	...ave or Reflow. The Formed Leads absorb Thermal Stress During Soldering, Eliminating the Possibility of Damage to the Die * Available in 12 mm Tape and Reel Use MMFT2955ET1 to order the 7 inch/1000 unit reel. Use MMFT2955ET3 to order the 13 ...
Description	1200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA From old datasheet system N-hannel Enhancement-ode Logic Level SOT23 TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS
File Size	176.21K / 10 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ONSEMI[ON Semiconductor] MOTOROLA[Motorola Inc]
Part No.	PZT2222AT1 PZT2222AT1_D ON2778 PZT2222AT1D PZT2222AT1G PZT2222AT3 PZT2222AT3G PZT2222AT1/D
OCR Text	...ldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die. * Available in 12 mm tape and reel Use PZT2222AT1 to order the 7 inch/1000 unit reel. Use PZT2222AT3 to order the 13 i...
Description	SOT-223 PACKAGE NPN SILICON TRANSISTOR SURFACE MOUNT 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-261AA From old datasheet system
File Size	136.30K / 6 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics] STMicroelectronics N.V.
Part No.	STW8NC80Z
OCR Text	...y, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect t...
Description	N-CHANNEL 700V - 1.1 ohm - 7A TO-247 Zener-Protected PowerMESH?III MOSFET N-CHANNEL 800V 1.3 OHM 6.7A TO-247 ZENER-PROTECTED POWERMESH III MOSFET N-CHANNEL 800V 1.3 OHM 6.7A TO-247 ZENER-PROTECTED POWERMESH III MOSFET N-CHANNEL 700V - 1.1 ohm - 7A TO-247 Zener-Protected PowerMESH⑩III MOSFET N沟道高达700V - 1.1欧姆- 7A条至247齐纳保护PowerMESH⑩三MOSFET
File Size	262.32K / 8 Page	View it Online	Download Datasheet

For absorb Found Datasheets File :: 1428 Search Time::1.875ms
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