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For chips Found Datasheets File :: 13702    Search Time::1.047ms    
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    RA07N3340M RA07N3340M-01

Mitsubishi Electric Sem...
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
Part No. RA07N3340M RA07N3340M-01
OCR Text ...silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and matching circuits. Wire le...
Description 330-400MHz 7.5W 9.6V 2 Stage Amp. For PORTABLE RADIO

File Size 82.45K  /  9 Page

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    CM600DY-12NF

Powerex Power Semiconductors
Part No. CM600DY-12NF
OCR Text ...easured point is just under the chips. if this value is used, r th(f-a) should be measured just under the chips. cm600dy-12nf dual igbtmod? nf-series module 600 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvani...
Description Dual IGBTMOD NF-Series Module 600 Amperes/600 Volts

File Size 473.74K  /  4 Page

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    CM600DXL-24S

Powerex Power Semiconductors
Part No. CM600DXL-24S
OCR Text ...he heatsink side just under the chips. r efer to the figure to the right for chip location. the heatsink ther mal resistance should be measured just under the chips. *3 p ulse width and repetition rate should be such that device jun...
Description Dual IGBT NX-Series Module 600 Amperes/1200 Volts

File Size 1,005.88K  /  9 Page

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    RA35H1516M-101 RA35H1516M06 RA35H1516M RA35H1516M-06

Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RA35H1516M-101 RA35H1516M06 RA35H1516M RA35H1516M-06
OCR Text ...silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and matching circuits. Wire le...
Description RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO

File Size 84.93K  /  8 Page

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    CM600DU-12NFH

Powerex Power Semiconductors
Part No. CM600DU-12NFH
OCR Text ...he heatsink side just under the chips. refer to the figure to the right for chip location. *3 case temperature (t c ') and heatsink temperature (t s ') is measured on the surface (mounting side) of the baseplate and the heatsink sid...
Description Dual IGBTMOD NFH-Series Module 600 Amperes/600 Volts

File Size 547.01K  /  6 Page

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    Aeroflex Inc.
AEROFLEX[Aeroflex Circuit Technology]
Part No. ACT-D1M96S-020F20T ACT-D1M96S ACT-D1M96S-020F20C ACT-D1M96S-020F20I ACT-D1M96S-020F20M ACT-D1M96S-020F20Q
OCR Text ...us Dynamic Random Access Memory chips in one MCM User Configureable as "2" Independent 512K X 48 X 2 Banks High-Speed, Low-Noise, Low-Voltage TTL (LVTTL) Interface 3.3-V Power Supply (10% Tolerance) Separate Logic and Output Driver Power Pi...
Description ACT-D1M96S High Speed 96 MegaBit 3.3V Synchronous DRAM Multichip Module

File Size 103.87K  /  14 Page

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    NSHC823J50TRD6F NSHC104J50TRD6F NSHC682J50TRB1F NSHC682J16TRA1F NSHC124J50TRE6F NSHC124J100TRG5F NSHC183J100TRD2F NSHC18

NIC-Components Corp.
Part No. NSHC823J50TRD6F NSHC104J50TRD6F NSHC682J50TRB1F NSHC682J16TRA1F NSHC124J50TRE6F NSHC124J100TRG5F NSHC183J100TRD2F NSHC183J16TRB1F NSHC183J50TRC2F NSHC184J50TRE7F NSHC272J50TRA1F NSHC271J16TRJ1F NSHC273J16TRB2F NSHC271J50TRA1F NSHC273J50TRC2F NSHC272J16TRJ1F NSHC273J100TRD4F NSHC562J50TRB1F NSHC563J16TRC2F NSHC563J50TRD5F NSHC561J50TRA1F NSHC563J100TRE4F NSHC562J16TRA1F NSHC561J16TRJ1F NSHC223J100TRD3F NSHC151J16TRJ1F NSHC154J50TRE6F NSHC152J16TRJ1F NSHC151J50TRA1F NSHC153J100TRD2F NSHC152J50TRA1F NSHC153J16TRB1F NSHC154J100TRH2F NSHC153J50TRC1F NSHC181J50TRA1F NSHC182J16TRJ1F NSHC184J100TRH4F NSHC182J50TRA1F NSHC181J16TRJ1F NSHC332J16TRA1F NSHC331J50TRA1F NSHC333J100TRE1F NSHC332J50TRB1F NSHC331J16TRJ1F NSHC391J16TRJ1F NSHC333J50TRC3F NSHC333J16TRB2F NSHC392J16TRA1F NSHC392J50TRB1F NSHC391J50TRA1F NSHC473J50TRD5F NSHC472J50TRB1F NSHC473J100TRE3F NSHC473J16TRB3F NSHC123J16TRB1F NSHC123J100TRD1F NSHC122J50TRA1F NSHC122J16TRJ1F NSHC121J50TRA1F NSHC121J16TRJ1F NSHC123J50TRC1F NSHC823J100TRG2F NSHC821J50TRA1F NSHC822J50TRB2F NSHC821J16TRJ1F NSHC822J16TRA2F NSHC471J16TRJ1F NSHC472J16TRA1F NSHC471J50TRA1F NSHC823J16TRC3F NSHC222J50TRA1F NSHC221J50TRA1F NSHC223J16TRB1F NSHC223J50TRC2F NSHC
OCR Text ...o change stacked film capacitor chips nshc series features ? stacked metallized polyphenylene sulfide (pps) film ? standard eia 0603, 0805, 1206, 1210, 1913 and 2416 sizes ? wide temperature range up to +125 o c (100pf ~ 0.1 f) ? high heat...
Description Stacked Film Capacitor chips

File Size 94.27K  /  6 Page

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    Alpha Industries Inc
ALPHA[Alpha Industries]
Alpha Industries, Inc.
Part No. AFM04P3-212 AFM04P3-213
OCR Text chips AFM04P3-212, AFM04P3-213 Features s Low Noise Figure, 0.6 dB @ 4 GHz s 20 dBm Output Power @ 18 GHz s High Associated Gain, 13 dB @ 4 GHz s High Power Added Efficiency, 25% s Broadband Operation, DC-26 GHz s Available in Tape and Re...
Description Low Noise/Medium Power GaAs MESFET chips

File Size 25.98K  /  3 Page

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    Alpha Industries, Inc.
ALPHA[Alpha Industries]
Alpha Industries Inc
Part No. AFM06P3-213 AFM06P3-212
OCR Text chips AFM06P3-212, AFM06P3-213 Features s 22 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Added Efficiency, 23% s Broadband Operation, DC-18 GHz s 0.25 m Ti/Pd/Au Gates s Passivated Surface Source 212 Gate...
Description Ka Band Power GaAs MESFET chips

File Size 25.50K  /  3 Page

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    Alpha Industries, Inc.
ALPHA[Alpha Industries]
Alpha Industries Inc
Part No. AFP02N8-213 AFP02N8-212
OCR Text chips AFP02N8-212, AFP02N8-213 Features s Low Noise Figure, 1.55 dB @ 4 GHz s High Associated Gain, 13 dB @ 4 GHz s High MAG, > 15 dB @ 4 GHz s 0.7 m Ti/Pd/Au Gates s Passivated Surface s Low Cost Metal Ceramic Package s Available with Tw...
Description General Purpose Packaged PHEMT chips 通用包装PHEMT器件芯片
LJT 32C 32#20 PIN PLUG

File Size 30.29K  /  4 Page

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For chips Found Datasheets File :: 13702    Search Time::1.047ms    
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