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TOSHIBA
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| Part No. |
TPCA8039-H
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| OCR Text |
... (a) device mounted on a glass-epoxy board (a) (b) device mounted on a glass-epoxy board (b) note 3: v dd = 24 v, t ch = 25c (initial), l = 100 h, r g = 25 , i ar = 34 a note 4: repetitive r... |
| Description |
Power MOSFET (N-ch single VDSS≤30V)
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| File Size |
194.17K /
7 Page |
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it Online |
Download Datasheet
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NIEC[Nihon Inter Electronics Corporation]
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| Part No. |
EC10LA03
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| OCR Text |
...= 1.0A Thermal Resistance Glass epoxy Substrate Mounted*1 Rth(j-a) (Junction to Ambient) Alumina Substrate Mounted *2 *1 Glass epoxy Substrate Mounted *2 Alumina Substrate Mounted Soldering Lands=2x2mm,Both Sides
EC10LA_ OUTLINE DRAWING ... |
| Description |
Schottky Barrier Diode
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| File Size |
50.32K /
6 Page |
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it Online |
Download Datasheet |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FMS2016
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| OCR Text |
...hod is by the use of conductive epoxy. epoxy should be applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height. For automated ... |
| Description |
SP4T GaAs Multi-Band GSM Antenna Switch
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| File Size |
143.76K /
4 Page |
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it Online |
Download Datasheet |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FMS2018
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| OCR Text |
...hod is by the use of conductive epoxy. epoxy should be applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height. For automated ... |
| Description |
SP7T GaAs Multi-Band GSM UMTS Antenna Switch
SP7T GaAs Multi-Band GSM - UMTS Antenna Switch
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| File Size |
328.37K /
5 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
TPC8057-H
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| OCR Text |
...te 2: device mounted on a glass-epoxy board (a), figure 5.1 note 3: device mounted on a glass-epoxy board (b), figure 5.2 note 4: v dd = 24 v, t ch = 25 (initial), l = 2.0 mh, r g = 1 ? , i ar = 18 a fig. fig. fig. fig. 5.1 5.1 ... |
| Description |
Power MOSFET (N-ch single VDSS≤30V)
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| File Size |
227.06K /
9 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
TPC8053-H
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| OCR Text |
... (a) device mounted on a glass-epoxy board (a ) (b) device mounted on a glass-epoxy board (b) note 3: v dd = 24 v, t ch = 25c (initial), l = 500 h, r g = 25 , i ar = 9 a note 4: repetitive rating: pul... |
| Description |
Power MOSFET (N-ch single 30V<VDSS≤60V)
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| File Size |
195.68K /
7 Page |
View
it Online |
Download Datasheet |
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Sharp Corporation
SHARP[Sharp Electrionic Components]
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| Part No. |
GL454 GL453
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| OCR Text |
...Long lead pin type ( GL454 ) 5. epoxy resin package
Bidirectional Emission Type Infrared Emitting Diode
s Outline Dimensions
GL453 4.2 0.2 Rest of gate 0.3MAX. 3.0 0.2 0.5 1.5 1.7 0.2 Pink transparent epoxy resin 1
( Unit : mm )
... |
| Description |
Bidirectional Emission Type Infrared Emitting Diode
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| File Size |
43.11K /
4 Page |
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it Online |
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HI-SINCERITY MICROELECTRONICS, CORP.
HSMC CORP.
Hi-Sincerity Mocroelectronics Corp.
HSMC[Hi-Sincerity Mocroelectronics]
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| Part No. |
H02N60J H02N60 H02N60E H02N60F H02N60I
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| OCR Text |
...-Tin (Pb-free) * Mold Compound: epoxy resin family, flammability solid burning class: UL94V-0
DIM A C F G H L M N a1 a2 a5
Min. 6.35 4.80 1.30 5.40 2.20 0.40 2.20 0.90 0.40 0.65
Max. 6.80 5.50 1.70 6.25 3.00 0.90 2.40 1.50 0.65 *2.... |
| Description |
N-Channel Power Field Effect Transistor N沟道功率场效应晶体管
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| File Size |
73.75K /
6 Page |
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it Online |
Download Datasheet |
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HSMC CORP.
HSMC[Hi-Sincerity Mocroelectronics]
Hi-Sincerity Mocroelectronics Corp.
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| Part No. |
H02N60SJ H02N60S H02N60SE H02N60SF H02N60SI
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| OCR Text |
...-Tin (Pb-free) * Mold Compound: epoxy resin family, flammability solid burning class: UL94V-0
DIM A C F G H L M N a1 a2 a5
Min. 6.35 4.80 1.30 5.40 2.20 0.40 2.20 0.90 0.40 0.65
Max. 6.80 5.50 1.70 6.25 3.00 0.90 2.40 1.50 0.65 *2.... |
| Description |
N-Channel Power Field Effect Transistor
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| File Size |
73.82K /
6 Page |
View
it Online |
Download Datasheet |
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