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multi-epitaxial Datasheet PDF File

For multi-epitaxial Found Datasheets File :: 390 Search Time::1.203ms
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				http:// Stanford Microdevices 其它接口
Part No.	SXA-289
OCR Text	...ty makes it an ideal choice for multi-carrier as well as digital applications. SXA-289 5-2000 MHz Medium Power GaAsHBT Amplifier Product Features * Patented High Reliability GaAs HBT Technology * High Output 3rd Order Intercept : +41...
Description	5-2000 MHz Medium Power GaAsHBT Amplifier TERMINAL
File Size	233.50K / 6 Page	View it Online	Download Datasheet

				UNISONIC TECHNOLOGIES CO LTD 友顺科技股份有限公司 UTC[Unisonic Technologies]
Part No.	UBV45L-T92-B UBV45-T92-K UBV45-T92-B UBV45 UBV45L-T92-K
OCR Text	...manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The UTC UBV45 is designed for use in Compact Fluorescent Lamps. NPN SILICON TRANSISTOR 1 TO-92 FEATURES * ...
Description	HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS
File Size	44.98K / 4 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BLW34
OCR Text	...tter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal area. The combination of optimum thermal design and the application of gold sandwich metallization realizes excellent reliability ...
Description	UHF Linear power transistor(UHF 线性功率晶体管) UHF BAND, Si, NPN, RF POWER TRANSISTOR UHF Linear power transistor(UHF 线性功率晶体管)
File Size	80.65K / 12 Page	View it Online	Download Datasheet

				Seme LAB TT electronics Semelab Limited
Part No.	BUX12
OCR Text	... 6.35 (0.25) 9.15 (0.36) NPN MULTI - EPITAXIAL POWER TRANSISTOR 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 22.23 (0.875) max. FEATURES * HIGH CURRENT * FAS...
Description	NPN MULTI - EPITAXIAL POWER TRANSISTOR
File Size	14.20K / 2 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	BUL116 BUL116D 8671
OCR Text	...he device is manufactured using Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the w...
Description	MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR From old datasheet system
File Size	217.39K / 6 Page	View it Online	Download Datasheet

				Philips Semiconductors
Part No.	BLU20_12 BLU20/12
OCR Text	...communications band. FEATURES * multi-base structure and emitter-ballasting resistors for an optimum temperature profile * gold metallization ensures excellent reliability. * internal matching to achieve an optimum wideband capability and h...
Description	UHF power transistor
File Size	56.57K / 11 Page	View it Online	Download Datasheet

				Philips Semiconductors
Part No.	BLU45_12 BLU45/12
OCR Text	...communications band. FEATURES * multi-base structure and emitter-ballasting resistors for an optimum temperature profile. * internal matching to achieve an optimum wideband capability and high power gain. * gold metallization ensures excell...
Description	UHF power transistor
File Size	54.86K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BLU60_12 BLU60 BLU60-12 BLU60/12
OCR Text	...communications band. FEATURES * multi-base structure and emitter-ballasting resistors for an optimum temperature profile. * internal matching to achieve an optimum wideband capability and high power gain. * gold metallization ensures excell...
Description	From old datasheet system UHF power transistor CONNECTOR ACCESSORY
File Size	54.77K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BLU97
OCR Text	...in the 470 MHz band. FEATURES * multi-base structure and emitter-ballasting resistors for an optimum temperature profile. * gold metallization ensures excellent reliability. BLU97 The transistor has a 4-lead stud envelope with a ceramic...
Description	UHF power transistor
File Size	54.90K / 11 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BLV45_12 BLV45 BLV45-12 BLV45/12
OCR Text	...ommmunications band. FEATURES * multi-base structure and emitter-ballasting resistors for an optimum temperature profile * gold metallization ensures excellent reliability * internal matching to achieve an optimum wideband capability and hi...
Description	VHF power transistor From old datasheet system
File Size	60.31K / 10 Page	View it Online	Download Datasheet

For multi-epitaxial Found Datasheets File :: 390 Search Time::1.203ms
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