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ST Microelectronics
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Part No. |
TDA7295
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OCR Text |
... value unit r th j-case thermal resistance junction-case max 1.5 c/w electrical characteristics (refer to the test circuit v s = 30v, r l = 8 w , g v = 30db; r g = 50 w ; t amb = 25c, f = 1 khz; unless otherwise specified. symbo... |
Description |
80V-80W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY
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File Size |
1,184.40K /
13 Page |
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it Online |
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ST Microelectronics
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Part No. |
TDA7296S
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OCR Text |
...yp max unit r th j-case thermal resistance junction-case 1 1.5 c/w tda7296s 2/11
electrical characteristics (refer to the test circuit v s = 24v, r l = 8 w , g v = 30db; r g = 50 w ; t amb = 25c, f = 1 khz; unless otherwise spe... |
Description |
70V-60W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY
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File Size |
317.61K /
11 Page |
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it Online |
Download Datasheet
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ST Microelectronics
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Part No. |
TDA7296
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OCR Text |
... value unit r th j-case thermal resistance junction-case max 1.5 c/w electrical characteristics (refer to the test circuit v s = 24v, r l = 8 w , g v = 30db; r g = 50 w ; t amb = 25c, f = 1 khz; unless otherwise specified. symbo... |
Description |
70V-60W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY
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File Size |
1,175.26K /
13 Page |
View
it Online |
Download Datasheet
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Cystech Electonics
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Part No. |
MTB06N03H8
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OCR Text |
...ggedized device de sign, low on-resistance and cost effectiveness. features ? single drive requirement ? low on-resistance ? fast switching characteristic ? dynamic dv/dt rating ? repetitive avalanche rated ? pb-free lead plat... |
Description |
N-Channel Logic Level Enhancement Mode Power MOSFET
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File Size |
243.53K /
6 Page |
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it Online |
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Caddock
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Part No. |
MP312
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OCR Text |
...tors are made with micronox ? resistance ?lms ?red onto a ceramic substrate which is thermally bonded to an anodized aluminum base. by mounting this assembly directly to a metal surface for improved heat transfer, the ... |
Description |
(MP312 / MP330) Power Film Resistors
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File Size |
108.93K /
1 Page |
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it Online |
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TOSHIBA
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Part No. |
TPC8010-H
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OCR Text |
... (typ.) low drain-source on resistance: r ds (on) = 12 m ? (typ.) high forward transfer admittance: |y fs | = 11 s (typ.) low leakage current: i dss = 10 a (max) (v ds = 30 v) enhancement mode: v th = 1.1 to 2.3 v (v ds... |
Description |
Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) DC-DC Converters Notebook PC Applications Portable Equipment Applications
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File Size |
176.57K /
7 Page |
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it Online |
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Price and Availability
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