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For v-pluse Found Datasheets File :: 935 Search Time::7.047ms
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				Vishay Siliconix
Part No.	SI2327DS SI2327DS-T1-E3
OCR Text	V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -200 200 FEATURES ID (A) -0.49 -0.48 rDS(on) (W) 2.35 @ VGS = -10 V 2.45 @ VGS = -6.0 V ...Pluse Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipationa, b Operating Juncti...
Description	P-Channel 200-V (D-S) MOSFET
File Size	85.39K / 6 Page	View it Online	Download Datasheet

				Inchange Semiconductor Company Limited
Part No.	STP75NF75
OCR Text	... 20 80 320 300 175 -55~175 UNIT V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 0.5 62.5 UNIT /W /W isc Websitewww.iscsemi.cn IN...
Description	isc N-Channel MOSFET Transistor
File Size	72.57K / 2 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	SI1411DH SI1411DH-T1-E3
OCR Text	V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -150 FEATURES ID (A) -0.52 -0.51 rDS(on) (W) 2.6 @ VGS = -10 V 2.7 @ VGS = -6 V Qg (Ty...Pluse Avalanch Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range L ...
Description	P-Channel 150-V (D-S) MOSFET
File Size	93.17K / 6 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FGA70N30T
OCR Text	... +150 -55 to +150 300 Units V V A W W oC o o C C Thermal Characteristics Symbol RJC(IGBT) RJA Notes: (1)Repetitive test , pluse width = 100usec , Duty = 0.2 * Ic_pluse limited by max Tj Parameter Thermal Resistance, Juncti...
Description	300V, 70A PDP IGBT
File Size	552.10K / 7 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FGA90N33ATD
OCR Text	... +150 -55 to +150 300 Units V V A A A W W oC o @ TC = 25 C @ TC = 100oC C oC Thermal Characteristics Symbol RJC(IGBT) RJC...pluse limited by max Tj (c)2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com...
Description	330V, 90A PDP Trench IGBT
File Size	636.89K / 9 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FGA90N33AT
OCR Text	... +150 -55 to +150 300 Units V V A A A W W oC o C oC Thermal Characteristics Symbol RJC(IGBT) RJA Parameter Thermal Resis...pluse limited by max Tj (c)2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com...
Description	330V, 90A PDP Trench IGBT
File Size	607.51K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FGPF50N30T FGPF50N30TTU
OCR Text	... +150 -55 to +150 300 Units V V A W W o o o C C C Thermal Characteristics Symbol RJC(IGBT) RJA Parameter Thermal Resistance...pluse limited by max Tj (c)2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com...
Description	Discrete IGBT 300V, 50A PDP IGBT
File Size	565.27K / 7 Page	View it Online	Download Datasheet

				Inchange Semiconductor Company Limited
Part No.	IRFZ44CN
OCR Text	...5 20 49 160 94 175 -55~175 UNIT V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 1.5 62 UNIT /W /W isc Websitewww.iscsemi.cn INCH...
Description	isc N-Channel MOSFET Transistor
File Size	99.82K / 2 Page	View it Online	Download Datasheet

				MIC GROUP RECTIFIERS
Part No.	SR104 SR106 SR105 SR103 SR102
OCR Text	...INSTANTANEOUS FORWARD VOLT AGE,(V) 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) FIG.5-TYPICAL JUNCTION CAPACITANCE 1000 JUNCTION CAPACITANCE,(pF) Tj =25 C f=1MHz V sig =50mV 100 SR1...
Description	SCHOTTKY BARRIER RECTIFIER
File Size	144.21K / 2 Page	View it Online	Download Datasheet

				KEC(Korea Electronics)
Part No.	KMA2D3P20S
OCR Text	....25 150 -55 150 100 /W A W UNIT V V K M SOT-23W Pulsed (Note1) Source-Drain Diode Current Drain Power Dissipation Ta=25 PD * ...Pluse PDM t1 t2 10-2 10-5 - Duty Factor, D= t1/t2 10-3 10-2 10-1 100 101 102 103 10-4 ...
Description	P-Ch Trench MOSFET
File Size	469.85K / 5 Page	View it Online	Download Datasheet

For v-pluse Found Datasheets File :: 935 Search Time::7.047ms
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