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SamHop Microelectronics...
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| Part No. |
STS8213
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| OCR Text |
...d r ds(on) (m ) max 20v 7a 18.0 @ vgs=3.1v features super high dense cell design for low r ds(on) . rugged and reliable. suface mount...5a v gs =4v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay ti... |
| Description |
Super high dense cell design for low RDS(ON).
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
108.35K /
7 Page |
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it Online |
Download Datasheet
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ANPEC
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| Part No. |
AMP7313
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| OCR Text |
...ard voltage i sd =2a , v gs =0v 0.7 1.3 v dynamic b q g total gate charge 30 36 q gs gate-source charge 5.8 q gd gate-drain charge v ds =15v...5a crss coss ciss frequency=1mhz v ds -drain-to-source voltage (v) 345678910 0.000 0.005 0.010 0.015... |
| Description |
Dual N-Channel Enhancement Mode MOSFET
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| File Size |
133.37K /
9 Page |
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it Online |
Download Datasheet |
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TY Semiconductor Co., Ltd
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| Part No. |
STS8235
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| OCR Text |
...v t a =25 c 3.6 t a =70 c a a 0.8 product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
4 symbol min typ ...5a,v gs =4.5v fall time turn-on delay time m ohm v gs =4.5v , i d =4.5a v ds =5v , i d =4.5a input c... |
| Description |
Super high dense cell des ign for low R DS (ON).
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| File Size |
97.24K /
2 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STS8217
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| OCR Text |
...d 2 t a =70 c 5.6 a t a =70 c 0.8 w dual n-channel enhancement mode field effect transistor g r e r r p p r p p o r r o e ...5a v gs =4v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay ti... |
| Description |
Super high dense cell design for low RDS(ON).
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
102.73K /
7 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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