|
|
 |
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
|
Part No. |
BSM400GB60DN2 400B06N2 C67070-A2120-A67
|
OCR Text |
...uit: >1s di/dt = 500A/s 1500A/s 2500a/s
0.5
0.0 0 100 200 300 400 500 600 V 800 VCE
0 0 100 200 300 400 500 600 V 800 VCE
Semiconductor Group
6
Apr-25-1997
BSM 400 GB 60 DN2
Typ. switching time
Typ. switching time... |
Description |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) From old datasheet system
|
File Size |
127.07K /
9 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Naina Semiconductor
|
Part No. |
80NT3
|
OCR Text |
...hase ? high surge current of 2500a @ 60hz ? easy construction ? non-isolated ? mounting base as common anode electrical characteristics (t c = 25 o c unless otherwise specified) parameter average on-state current single ... |
Description |
Non-isolated Thyristor Module
|
File Size |
162.61K /
2 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Naina Semiconductor
|
Part No. |
60NT3
|
OCR Text |
...hase ? high surge current of 2500a @ 60hz ? easy construction ? non-isolated ? mounting base as common anode electrical characteristics (t c = 25 o c unless otherwise specified) parameter average on-state current single ph... |
Description |
Non-isolated Thyristor Module
|
File Size |
161.37K /
2 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|