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Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
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| Part No. |
IDTQS3VH16244PV IDTQS3VH16244 IDTQS3VH16244PA IDTQS3VH16244PAG
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| OCR Text |
...4
1Y4
2A4
2Y4
3G
4G
3A1 3A2 3A3
3Y1 3Y2 3Y3
4A1 4A2 4A3
4Y1 4Y2 4Y3
3A4
3Y4
4A4
4Y4
The IDT logo i...BIT HIGH BANDWIDTH BUS SWITCH
INDUSTRIAL TEMPERATURE RANGE
PIN CONFIGURATION
1G
1Y1 1Y2
A... |
| Description |
QUICKSWITCH PRODUCTS 2.5V / 3.3V 16-BIT HIGH BANDWIDTH BUS SWITCH QUICKSWITCH产品.5V / 3.3V6位高带宽总线开
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| File Size |
80.61K /
8 Page |
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SEMIKRON
http://
Samsung semiconductor
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| Part No. |
K9WAG08U1A-I K9WAG08U1A-Y K9NBG08U5A K9NBG08U5A-P K9NBG08U5A-PCB00 K9WAG08U1A-PCB00 K9K8G08U0A-Y
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| OCR Text |
...itle 1g x 8 bit / 2g x 8 bit / 4g x 8 bit nand flash memory revision history the attached data sheets are prepared and approved by samsung electronics. samsung electronics co., ltd. reserve the right to change the specifications. samsu... |
| Description |
2G X 8 FLASH 2.7V PROM, 20 ns, PDSO48
4G X 8 FLASH 2.7V PROM, 30 ns, PDSO48 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48
1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
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| File Size |
1,082.19K /
50 Page |
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Samsung semiconductor
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| Part No. |
K7I321884C K7I323684C
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| OCR Text |
...upply (1.8 v) v ddq 4e,8e,4f,8f,4g,8g,3h,4h,8h,9h,4j,8j,4k,8k,4l,8l output power supply (1.5v or 1.8v) v ss 4c,8c,4d-8d,5e-7e,6f,6g,6h,6j,6k...bit sequential for both read and write operations . synchronous pipeline read and late wr ite enable... |
| Description |
1Mx36 & 2Mx18 DDRII CIO b4 SRAM
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| File Size |
414.96K /
18 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
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| Part No. |
K7Q161854A-FC16 K7Q163654A-FC20 K7Q161854A-FC20 K7Q163654A K7Q163654A-FC10 K7Q163654A-FC13 K7Q163654A-FC16 K7Q161854A-FC10
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| OCR Text |
...G,5H,7H,5J,7J,5K,7K 4E,8E,4F,8F,4G,8G,3H,4H,8H,9H,4J,8J,4K,8K,4L,8L 2A,10A,4C,8C,4D-8D,5E-7E, 6F,6G,6H,6J,6K,5L-7L,4M-8M,4N,8N 10R 11R 2R 1R...bit sequential for both read and write operations, reguiring tow full clock bus cycles. Any request ... |
| Description |
1M X 18 QDR SRAM, 3 ns, PBGA165
512Kx36-bit, 1Mx18-bit QDR SRAM
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| File Size |
508.59K /
17 Page |
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Samsung semiconductor
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| Part No. |
K7J161882B
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| OCR Text |
...ply ( 1.8 v ) v ddq 4e,8e,4f,8f,4g,8g,3h,4h,8h,9h,4j,8j,4k,8k,4l,8l output power supply ( 1.5v or 1.8v ) v ss 2a,10a,4c,8c,4d-8d,5e-7e,6f,6g...bit sequential for both read and write operations. synchronous pipeline read and late write enable h... |
| Description |
(K7J161882B / K7J163682B) 512Kx36 & 1Mx18 DDR II SIO b2 SRAM
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| File Size |
418.03K /
17 Page |
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it Online |
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Samsung semiconductor
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| Part No. |
K7J641882M
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| OCR Text |
...ply ( 1.8 v ) v ddq 4e,8e,4f,8f,4g,8g,3h,4h,8h,9h,4j,8j,4k,8k,4l,8l output power supply ( 1.5v or 1.8v ) v ss 2a,10a,4c,8c,4d-8d,5e-7e,6f,6g...bit sequential for both read and write operations. synchronous pipeline read and late write enable h... |
| Description |
(K7J641882M / K7J643682M) 72Mb M-die DDRII SRAM Specification
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| File Size |
359.87K /
17 Page |
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it Online |
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Price and Availability
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