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  8- 16-channel Datasheet PDF File

For 8- 16-channel Found Datasheets File :: 89113    Search Time::1.437ms    
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    IRF3710L IRF3710S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710L IRF3710S
OCR Text ...10 seconds Max. 57 40 180 3.8 200 1.3 20 530 28 20 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Ther...16 12 C oss 2000 8 C rss 1000 4 0 1 10 100 A 0 0 40 80 FO R TE S T C IR...
Description Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.025ohm,身份证\u003d 57A条)
Power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A)
Power MOSFET(Vdss=100V Rds(on)=0.025ohm Id=57A)

File Size 180.61K  /  10 Page

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    IRF3710 IRF3710PBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710 IRF3710PBF
OCR Text ... 57 40 230 200 1.3 20 28 20 5.8 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V A mJ V/ns C Thermal Resistan...16 5 ) 1 .32 (.05 2) 1 .22 (.04 8) 4 1 5.24 (.60 0) 1 4.84 (.58 4) 1.15 (.04 5) M IN 1 2 3 ...
Description Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 23mohm,身份证\u003d 57A条)
Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A)
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 92.57K  /  8 Page

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    IRF3717

IRF[International Rectifier]
Part No. IRF3717
OCR Text ... ID 20A S S 1 2 3 4 8 7 Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Cu...16 160 2.5 1.6 0.02 -55 to + 150 Units V c A W W/C C Power Dissipation Power Dissipatio...
Description HEXFETPower MOSFET

File Size 246.14K  /  10 Page

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    IRF460

SEME-LAB[Seme LAB]
Part No. IRF460
OCR Text ...SS ID = ID [Cont.] @ 25C RG = 1.8 Min. Typ. 2890 590 230 140 18 75 19 43 85 56 190 27 135 35 120 130 98 ns nC pF Max. Unit SOURCE - DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM VSD trr Qrr Characteristic Continuous Source Current Puls...
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 16.77K  /  2 Page

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    IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR

International Rectifier, Corp.
Part No. IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text ...seconds Max. -74 -52 -260 3.8 200 1.3 20 930 -38 20 -5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Th...16 C , C a p a c ita n c e (p F ) 5000 C is s 4000 12 C o ss 3000 8 2000 C...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 159.46K  /  10 Page

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    IRF4905 IRF4B905 IRF4905PBF

International Rectifier, Corp.
Part No. IRF4905 IRF4B905 IRF4905PBF
OCR Text .... 0.75 --- 62 Units C/W 8/25/97 IRF4905 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/T...16 C , C a p a c ita n c e (p F ) 5000 C is s 4000 12 C o ss 3000 8 2000 C...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 104.67K  /  8 Page

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    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305L IRF5305S
OCR Text ...seconds Max. -31 -22 -110 3.8 110 0.71 20 280 -16 11 -5.8 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-stat...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 167.31K  /  10 Page

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    IRF5305

IRF[International Rectifier]
Part No. IRF5305
OCR Text ...itance Min. -55 --- --- -2.0 8.0 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.034 --- --- --- --- --- -...16 C, C apacitanc e (pF ) 12 8 C rss 500 4 0 1 10 100 A 0 0 10 20 30 FO ...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 120.44K  /  8 Page

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    IRF530A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF530A
OCR Text ...Temp. for Soldering Purposes, 1/8" from case for 5-seconds C 300 Thermal Resistance Symbol R JC R CS R JA Characteristic Junct...16 . 18 . 20 . 22 . 1 5 oC 7 2 oC 5 1 -1 0 04 . 06 . ID , Drain Current [A] VSD , Source-Dr...
Description N-CHANNEL POWER MOSFET
Advanced Power MOSFET

File Size 253.11K  /  7 Page

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    IRF530FI IRF530 3003

SGS Thomson Microelectronics
STMicroelectronics
Part No. IRF530FI IRF530 3003
OCR Text ...S, Tj TJMAX Unit V V V 11 7.8 64 40 0.27 2000 A A A W W/ C V o o o C C 1/6 (*) Pulse width limited by safe operating area IRF5...16 100 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo...
Description From old datasheet system
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

File Size 46.69K  /  6 Page

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